| Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ... Nature Photonics 7 (6), 466-472, 2013 | 481 | 2013 |
| Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5% RA Minamisawa, MJ Süess, R Spolenak, J Faist, C David, J Gobrecht, ... Nature communications 3 (1), 1096, 2012 | 163 | 2012 |
| Characterization of a silicon IGBT and silicon carbide MOSFET cross-switch hybrid M Rahimo, F Canales, RA Minamisawa, C Papadopoulos, U Vemulapati, ... IEEE Transactions on Power Electronics 30 (9), 4638-4642, 2015 | 140 | 2015 |
| Line and point tunneling in scaled Si/SiGe heterostructure TFETs M Schmidt, A Schäfer, RA Minamisawa, D Buca, S Trellenkamp, ... IEEE Electron Device Letters 35 (7), 699-701, 2014 | 81 | 2014 |
| Silicon nanowire tunneling field-effect transistor arrays: Improving subthreshold performance using excimer laser annealing JT Smith, C Sandow, S Das, RA Minamisawa, S Mantl, J Appenzeller IEEE Transactions on Electron Devices 58 (7), 1822-1829, 2011 | 59 | 2011 |
| Current sharing behavior in Si IGBT and SiC MOSFET cross-switch hybrid RA Minamisawa, U Vemulapati, A Mihaila, C Papadopoulos, M Rahimo IEEE Electron Device Letters 37 (9), 1178-1180, 2016 | 58 | 2016 |
| Power-dependent Raman analysis of highly strained Si nanobridges MJ Suess, RA Minamisawa, R Geiger, KK Bourdelle, H Sigg, R Spolenak Nano letters 14 (3), 1249-1254, 2014 | 55 | 2014 |
| pH response of silicon nanowire sensors: Impact of nanowire width and gate oxide K Bedner, VA Guzenko, A Tarasov, M Wipf, RL Stoop, D Just, S Rigante, ... Sens. Mater 25 (8), 567-576, 2013 | 55 | 2013 |
| Robust 3.3 kV silicon carbide MOSFETs with surge and short circuit capability L Knoll, A Mihaila, F Bauer, V Sundaramoorthy, E Bianda, R Minamisawa, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 33 | 2017 |
| Simulation and experimental results of 3.3 kV cross switch “Si-IGBT and SiC-MOSFET” hybrid UR Vemulapati, A Mihaila, RA Minamisawa, F Canales, M Rahimo, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 28 | 2016 |
| Unipolar behavior of asymmetrically doped strained Si0. 5Ge0. 5 tunneling field-effect transistors M Schmidt, RA Minamisawa, S Richter, A Schäfer, D Buca, JM Hartmann, ... Applied Physics Letters 101 (12), 2012 | 25 | 2012 |
| Effects of MeV Si ions bombardments on thermoelectric properties of sequentially deposited BixTe3/Sb2Te3 nano-layers S Budak, CI Muntele, RA Minamisawa, B Chhay, D Ila Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 25 | 2007 |
| Elastic strain and dopant activation in ion implanted strained Si nanowires RA Minamisawa, S Habicht, D Buca, R Carius, S Trellenkamp, ... Journal of applied physics 108 (12), 2010 | 24 | 2010 |
| Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors M Schmidt, RA Minamisawa, S Richter, R Luptak, JM Hartmann, D Buca, ... Solid-state electronics 71, 42-47, 2012 | 23 | 2012 |
| A patterning-based strain engineering for sub-22 nm node FinFETs M Schmidt, MJ Süess, AD Barros, R Geiger, H Sigg, R Spolenak, ... IEEE Electron Device Letters 35 (3), 300-302, 2014 | 21 | 2014 |
| Determination of transit dose profile for a 192Ir HDR source GP Fonseca, RA Rubo, RA Minamisawa, GR Dos Santos, PCG Antunes, ... Medical Physics 40 (5), 051717, 2013 | 20 | 2013 |
| Ultra-thin epitaxial tungsten carbide Schottky contacts in 4H-SiC L Knoll, V Teodorescu, RA Minamisawa IEEE Electron Device Letters 37 (10), 1318-1320, 2016 | 18 | 2016 |
| Direct measurement of instantaneous source speed for a HDR brachytherapy unit using an optical fiber based detector a RA Minamisawa, RA Rubo, RM Seraide, JRO Rocha, A Almeida Medical physics 37 (10), 5407-5411, 2010 | 17 | 2010 |
| Characterization of a n+ 3C/n− 4H SiC heterojunction diode RA Minamisawa, A Mihaila, I Farkas, VS Teodorescu, VV Afanas' ev, ... Applied Physics Letters 108 (14), 2016 | 16 | 2016 |
| Thickness and MeV Si ions bombardment effects on the thermoelectric properties of Ce3Sb10 thin films S Güner, S Budak, RA Minamisawa, C Muntele, D Ila Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008 | 16 | 2008 |
