Wladek Grabinski
Wladek Grabinski
Verified email at - Homepage
Cited by
Cited by
RF distortion analysis with compact MOSFET models
P Bendix, P Rakers, P Wagh, L Lemaitre, W Grabinski, CC McAndrew, ...
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat …, 2004
Electrical modeling of a pressure sensor MOSFET
JM Sallese, W Grabinski, V Meyer, C Bassin, P Fazan
Sensors and Actuators A: Physical 94 (1-2), 53-58, 2001
Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model
C Lallement, JM Sallese, M Bucher, W Grabinski, PC Fazan
IEEE Transactions on Electron Devices 50 (2), 406-417, 2003
Steep slope VO2switches for wide-band (DC-40 GHz) reconfigurable electronics
WA Vitale, A Paone, M Fernández-Bolaños, A Bazigos, W Grabinski, ...
72nd Device Research Conference, 29-30, 2014
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
M Najmzadeh, M Berthomé, JM Sallese, W Grabinski, AM Ionescu
Solid-state electronics 98, 55-62, 2014
Advancements in DC and RF Mosfet modeling with the EPFL-EKV charge based model
JM Sallese, W Grabinski, AS Porret, M Bucher, C Lallement, ...
8th Int. Conf. MIXDES, 45-52, 2001
Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu
IEEE transactions on electron devices 59 (12), 3519-3526, 2012
Large-signal network analyzer measurements and their use in device modeling
E Vandamme, W Grabinski, D Schreurs, T Gneiting
MIXDES 2002, 2002
„The EKV model parameter extraction based on its IC-CAP USERC implementation”
W Grabinski, M Bucher, F Krummenacher
Eur. IC-CAP Users Meet, 1999
EKV MOS Transistor Modelling & RF Application
M Bucher, W Grabinski
HP-RF MOS Modelling Workshop, 1999
A versatile setup for semiconductor testing up to 550/spl deg/C
W Grabinski, A Stricker, W Fichtner
1998 Fourth International High Temperature Electronics Conference. HITEC …, 1998
Accumulation-mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu
2011 Proceedings of the European Solid-State Device Research Conference …, 2011
An analytical quantum model for the surface potential of deep sub micron MOSFETs
F Pregaldiny, C Lallement, W Grabinski, JB Kammerer, D Mathiot
10th international conference on Mixed Design Integrated Circuits and …, 2003
High level description of thermodynamical effects in the EKV 2.6 most model
C Lallement, F Pêcheux, W Grabinski
9th Int. Conf. Mixed Design of Integrated Circ. & Sys.(MIXDES 2002), 45-50, 2002
Foss ekv2. 6 verilog-a compact mosfet model
W Grabinski, M Pavanello, M de Souza, D Tomaszewski, J Malesinska, ...
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
Standardization of compact device modeling in high level description language
L Lemaitre, C McAndrew, W Grabinski
Proc. Nanotech, 372-375, 2003
FOSS EKV 2.6 parameter extractor
W Grabinski, D Tomaszewski, F Jazaeri, A Mangla, JM Sallese, ...
2015 22nd International Conference Mixed Design of Integrated Circuits …, 2015
Transitioning from BSIM4 to BSIM6
YS Chauhan, M Karim, V Sriram, P Thakur, N Paydovosi, A Sachid, ...
Proc. MOS-AK Workshop, 1-29, 2012
Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu
69th Device Research Conference, 145-146, 2011
The EKV3. 0 MOSFET Model
M Bucher, F Krummenacher, C Enz, JM Sallese, A Bazigos, W Grabinski
Präsentation auf dem Compact Model Council Next Generation MOSFET Model Meeting, 2004
The system can't perform the operation now. Try again later.
Articles 1–20