| RF distortion analysis with compact MOSFET models P Bendix, P Rakers, P Wagh, L Lemaitre, W Grabinski, CC McAndrew, ... Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat …, 2004 | 80 | 2004 |
| Electrical modeling of a pressure sensor MOSFET JM Sallese, W Grabinski, V Meyer, C Bassin, P Fazan Sensors and Actuators A: Physical 94 (1-2), 53-58, 2001 | 49 | 2001 |
| Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model C Lallement, JM Sallese, M Bucher, W Grabinski, PC Fazan IEEE Transactions on Electron Devices 50 (2), 406-417, 2003 | 35 | 2003 |
| Steep slope VO2switches for wide-band (DC-40 GHz) reconfigurable electronics WA Vitale, A Paone, M Fernández-Bolaños, A Bazigos, W Grabinski, ... 72nd Device Research Conference, 29-30, 2014 | 22 | 2014 |
| Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm M Najmzadeh, M Berthomé, JM Sallese, W Grabinski, AM Ionescu Solid-state electronics 98, 55-62, 2014 | 15 | 2014 |
| Advancements in DC and RF Mosfet modeling with the EPFL-EKV charge based model JM Sallese, W Grabinski, AS Porret, M Bucher, C Lallement, ... 8th Int. Conf. MIXDES, 45-52, 2001 | 12 | 2001 |
| Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu IEEE transactions on electron devices 59 (12), 3519-3526, 2012 | 11 | 2012 |
| Large-signal network analyzer measurements and their use in device modeling E Vandamme, W Grabinski, D Schreurs, T Gneiting MIXDES 2002, 2002 | 10 | 2002 |
| „The EKV model parameter extraction based on its IC-CAP USERC implementation” W Grabinski, M Bucher, F Krummenacher Eur. IC-CAP Users Meet, 1999 | 9 | 1999 |
| EKV MOS Transistor Modelling & RF Application M Bucher, W Grabinski HP-RF MOS Modelling Workshop, 1999 | 9 | 1999 |
| A versatile setup for semiconductor testing up to 550/spl deg/C W Grabinski, A Stricker, W Fichtner 1998 Fourth International High Temperature Electronics Conference. HITEC …, 1998 | 9 | 1998 |
| Accumulation-mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 8 | 2011 |
| An analytical quantum model for the surface potential of deep sub micron MOSFETs F Pregaldiny, C Lallement, W Grabinski, JB Kammerer, D Mathiot 10th international conference on Mixed Design Integrated Circuits and …, 2003 | 8 | 2003 |
| High level description of thermodynamical effects in the EKV 2.6 most model C Lallement, F Pêcheux, W Grabinski 9th Int. Conf. Mixed Design of Integrated Circ. & Sys.(MIXDES 2002), 45-50, 2002 | 8 | 2002 |
| Standardization of compact device modeling in high level description language L Lemaitre, C McAndrew, W Grabinski Proc. Nanotech, 372-375, 2003 | 7 | 2003 |
| FOSS EKV 2.6 parameter extractor W Grabinski, D Tomaszewski, F Jazaeri, A Mangla, JM Sallese, ... 2015 22nd International Conference Mixed Design of Integrated Circuits …, 2015 | 6 | 2015 |
| Transitioning from BSIM4 to BSIM6 YS Chauhan, M Karim, V Sriram, P Thakur, N Paydovosi, A Sachid, ... Proc. MOS-AK Workshop, 1-29, 2012 | 6 | 2012 |
| Foss ekv2. 6 verilog-a compact mosfet model W Grabinski, M Pavanello, M de Souza, D Tomaszewski, J Malesinska, ... ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 5 | 2019 |
| Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs M Najmzadeh, D Bouvet, W Grabinski, AM Ionescu 69th Device Research Conference, 145-146, 2011 | 5 | 2011 |
| The EKV3. 0 MOSFET Model M Bucher, F Krummenacher, C Enz, JM Sallese, A Bazigos, W Grabinski Präsentation auf dem Compact Model Council Next Generation MOSFET Model Meeting, 2004 | 5 | 2004 |
Jean-Michel SalleseSenior scientist - Ecole polytechnique Federale de LausanneVerified email at epfl.ch
