| The ReaxFF reactive force-field: development, applications and future directions TP Senftle, S Hong, MM Islam, SB Kylasa, Y Zheng, YK Shin, ... npj Computational Materials 2 (1), 1-14, 2016 | 706 | 2016 |
| Epitaxial SrTiO 3 films with electron mobilities exceeding 30,000 cm 2 V− 1 s− 1 J Son, P Moetakef, B Jalan, O Bierwagen, NJ Wright, R Engel-Herbert, ... Nature materials 9 (6), 482-484, 2010 | 374 | 2010 |
| Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces R Engel-Herbert, Y Hwang, S Stemmer Journal of applied physics 108 (12), 124101, 2010 | 369 | 2010 |
| A steep-slope transistor based on abrupt electronic phase transition N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ... Nature communications 6 (1), 1-6, 2015 | 219 | 2015 |
| Correlated metals as transparent conductors L Zhang, Y Zhou, L Guo, W Zhao, A Barnes, HT Zhang, C Eaton, Y Zheng, ... Nature materials 15 (2), 204-210, 2016 | 190 | 2016 |
| Calculation of the magnetic stray field of a uniaxial magnetic domain R Engel-Herbert, T Hesjedal Journal of Applied Physics 97 (7), 074504, 2005 | 183 | 2005 |
| Growth of high-quality films using a hybrid molecular beam epitaxy approach B Jalan, R Engel-Herbert, NJ Wright, S Stemmer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009 | 162 | 2009 |
| Growth of high-quality films using a hybrid molecular beam epitaxy approach B Jalan, R Engel-Herbert, NJ Wright, S Stemmer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009 | 162 | 2009 |
| Synchronized charge oscillations in correlated electron systems N Shukla, A Parihar, E Freeman, H Paik, G Stone, V Narayanan, H Wen, ... Scientific reports 4 (1), 1-6, 2014 | 152 | 2014 |
| Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications DK Mohata, R Bijesh, S Mujumdar, C Eaton, R Engel-Herbert, T Mayer, ... 2011 International Electron Devices Meeting, 33.5. 1-33.5. 4, 2011 | 123 | 2011 |
| Highly conductive SrVO3 as a bottom electrode for functional perovskite oxides JA Moyer, C Eaton, R Engel‐Herbert Advanced Materials 25 (26), 3578-3582, 2013 | 97 | 2013 |
| Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer Applied Physics Letters 102 (2), 022907, 2013 | 91 | 2013 |
| Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities V Chobpattana, J Son, JJM Law, R Engel-Herbert, CY Huang, S Stemmer Applied Physics Letters 102 (2), 022907, 2013 | 91 | 2013 |
| Wafer-scale growth of VO 2 thin films using a combinatorial approach HT Zhang, L Zhang, D Mukherjee, YX Zheng, RC Haislmaier, N Alem, ... Nature communications 6 (1), 1-8, 2015 | 89 | 2015 |
| Analysis of trap state densities at interfaces Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer Applied Physics Letters 96 (10), 102910, 2010 | 81 | 2010 |
| Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy H Paik, JA Moyer, T Spila, JW Tashman, JA Mundy, E Freeman, N Shukla, ... Applied physics letters 107 (16), 163101, 2015 | 69 | 2015 |
| Quantification of trap densities at dielectric/III–V semiconductor interfaces R Engel-Herbert, Y Hwang, S Stemmer Applied Physics Letters 97 (6), 062905, 2010 | 56 | 2010 |
| Effect of postdeposition anneals on the Fermi level response of gate stacks Y Hwang, R Engel-Herbert, NG Rudawski, S Stemmer Journal of Applied Physics 108 (3), 034111, 2010 | 53 | 2010 |
| Effects of hydrogen anneals on oxygen deficient single crystals B Jalan, R Engel-Herbert, TE Mates, S Stemmer Applied Physics Letters 93 (5), 052907, 2008 | 52 | 2008 |
| Frontiers in the growth of complex oxide thin films: past, present, and future of hybrid MBE M Brahlek, AS Gupta, J Lapano, J Roth, HT Zhang, L Zhang, R Haislmaier, ... Advanced Functional Materials 28 (9), 1702772, 2018 | 49 | 2018 |
