The Double Star magnetic field investigation: instrument design, performance and highlights of the first year's observations C Carr, P Brown, TL Zhang, J Gloag, T Horbury, E Lucek, W Magnes, ... Annales Geophysicae 23 (8), 2713-2732, 2005 | 173 | 2005 |
Sensitive volume and triggering criteria of SEB in classic planar VDMOS A Luu, P Austin, F Miller, N Buard, T Carrière, P Poirot, R Gaillard, ... IEEE Transactions on Nuclear Science 57 (4), 1900-1907, 2010 | 62 | 2010 |
TCAD simulation of the single event effects in normally-OFF GaN transistors after heavy ion radiation M Zerarka, P Austin, A Bensoussan, F Morancho, A Durier IEEE Transactions on Nuclear Science 64 (8), 2242-2249, 2017 | 60 | 2017 |
Behavioral study of single-event burnout in power devices for natural radiation environment applications M Zerarka, P Austin, G Toulon, F Morancho, H Arbess, J Tasselli IEEE Transactions on Electron Devices 59 (12), 3482-3488, 2012 | 45 | 2012 |
SEB characterization of commercial power MOSFETs with backside laser and heavy ions of different ranges A Luu, F Miller, P Poirot, RÉ Gaillard, N Buard, T Carriere, P Austin, ... IEEE Transactions on Nuclear Science 55 (4), 2166-2173, 2008 | 45 | 2008 |
Trends in design and technology for new power integrated devices based on functional integration JL Sanchez, P Austin, R Berriane, M Marmouget EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS 1, 1.302-1.307, 1997 | 33 | 1997 |
Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs M Zerarka, P Austin, M Bafleur Microelectronics Reliability 51 (9-11), 1990-1994, 2011 | 32 | 2011 |
Full dynamic power bipolar device models for circuit simulation P Leturcq, MO Berraies, JP Laur, P Austin PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference …, 1998 | 20 | 1998 |
A new circuit-breaker integrated device for protection applications JP Laur, JL Sanchez, M Marmouget, P Austin, J Jalade, M Breil, M Roy 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD …, 1999 | 19 | 1999 |
A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer S Hamady, F Morancho, B Beydoun, P Austin, M Gavelle 2013 15th European Conference on Power Electronics and Applications (EPE), 1-6, 2013 | 16 | 2013 |
Realization of vertical P/sup+/walls through-wafer for bi-directional current and voltage power integrated devices JL Sanchez, E Scheid, P Austin, M Breil, H Carrière, P Dubreuil, ... ISPSD'03. 2003 IEEE 15th International Symposium on Power Semiconductor …, 2003 | 16 | 2003 |
A new high-voltage integrated switch: the" thyristor dual" function JL Sanchez, M Breil, P Austin, JP Laur, J Jalade, B Rousset, H Foch 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD …, 1999 | 16 | 1999 |
Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors M Zerarka, P Austin, F Morancho, K Isoird, H Arbess, J Tasselli IET Circuits, Devices & Systems 8 (3), 197-204, 2014 | 15 | 2014 |
Power switch with a controlled DI/DT J Jalade, JL Sanchez, JP Laur, M Breil, P Austin, E Bernier, M Roy US Patent 6,326,648, 2001 | 15 | 2001 |
Design and fabrication of new high voltage current limiting devices for serial protection applications JL Sanchez, P Leturcq, P Austin, R Berriane, M Breil, C Anceau, C Ayela 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD'96 …, 1996 | 15 | 1996 |
P-doped region below the AlGaN/GaN interface for normally-off HEMT S Hamady, F Morancho, B Beydoun, P Austin, M Gavelle 2014 16th European Conference on Power Electronics and Applications, 1-8, 2014 | 14 | 2014 |
New distributed model of NPT IGBT dedicated to power circuits design G Bonnet, P Austin, JL Sanchez Microelectronics reliability 44 (1), 79-88, 2004 | 14 | 2004 |
Analysis of an ESD failure mechanism on a SiC MESFET T Phulpin, D Trémouilles, K Isoird, D Tournier, P Godignon, P Austin Microelectronics Reliability 54 (9-10), 2217-2221, 2014 | 12 | 2014 |
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications JL Fock-Sui-Too, B Chauchat, P Austin, P Tounsi, M Mermet-Guyennet, ... Microelectronics Reliability 48 (8-9), 1453-1458, 2008 | 12 | 2008 |
Flexible technological process for functional integration E Imbernon, JL Sanchez, P Austin, M Breil, O Causse, B Rousset, ... 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No …, 2001 | 12 | 2001 |