Richard Geiger
Richard Geiger
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Zitiert von
Zitiert von
Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N von den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature Photonics, 2015
Analysis of enhanced light emission from highly strained germanium microbridges
MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ...
Nature Photonics 7 (6), 466-472, 2013
Optically pumped GeSn Microdisk Lasers on Si
D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, N Driesch, ...
ACS Photonics 3 (7), 1279-1285, 2016
Group IV direct band gap photonics: Methods, Challenges and Opportunities
R Geiger, T Zabel, H Sigg
Frontiers in Materials 2, 52, 2015
Excess carrier lifetimes in Ge layers on Si
R Geiger, J Frigerio, MJ Süess, D Chrastina, G Isella, R Spolenak, J Faist, ...
Applied Physics Letters 104 (6), 062106, 2014
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
A Gassenq, K Guilloy, GO Dias, N Pauc, D Rouchon, JM Hartmann, ...
Applied Physics Letters 107 (19), 191904, 2015
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain
K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ...
ACS Photonics 3 (10), 1907-1911, 2016
SiGeSn ternaries for efficient group IV heterostructure light emitters
N von den Driesch, D Stange, S Wirths, D Rainko, I Povstugar, A Savenko, ...
Small 13 (16), 1603321, 2017
Power-dependent Raman analysis of highly strained Si nanobridges
MJ Süess, RA Minamisawa, R Geiger, KK Bourdelle, H Sigg, ...
Nano letters 14 (3), 1249-1254, 2014
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ...
Applied Physics Letters 108 (24), 241902, 2016
Ultra-high amplified strains in 200-mm optical germanium-on-insulator (GeOI) substrates: towards CMOS-compatible Ge lasers
V Reboud, A Gassenq, GO Dias, K Guilloy, JM Escalante, S Tardif, ...
SPIE OPTO, 97520F-97520F-8, 2016
Transient mid-IR study of electron dynamics in TiO2 conduction band
J Sá, P Friedli, R Geiger, P Lerch, MH Rittmann-Frank, CJ Milne, ...
Analyst 138 (7), 1966-1970, 2013
A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs
M Schmidt, MJ Süess, AD Barros, R Geiger, H Sigg, R Spolenak, ...
Electronic Device Letters 99, 1-1, 2014
Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
V Reboud, J Widiez, JM Hartmann, GO Dias, D Fowler, A Chelnokov, ...
SPIE OPTO, 936714-936714-6, 2015
Determining the directional strain shift coefficients for tensile Ge: a combined x-ray diffraction and Raman spectroscopy study
T Etzelstorfer, A Wyss, MJ Süess, FF Schlich, R Geiger, J Frigerio, ...
Measurement Science and Technology 28 (2), 025501, 2017
Uniaxially stressed germanium with fundamental direct band gap
R Geiger, T Zabel, E Marin, A Gassenq, JM Hartmann, J Widiez, ...
arXiv preprint arXiv:1603.03454, 2015
Top-down method to introduce ultra-high elastic strain
T Zabel, R Geiger, E Marin, E Müller, A Diaz, C Bonzon, MJ Süess, ...
Journal of Materials Research 32 (4), 726-736, 2017
GeSn lasers for CMOS integration
D Buca, N von den Driesch, D Stange, S Wirths, R Geiger, CS Braucks, ...
Electron Devices Meeting (IEDM), 2016 IEEE International, 22.3. 1-22.3. 4, 2016
Direct Band Gap Germanium for Si-compatible Lasing
R Geiger
Dissertation, ETH-Zürich, 2016, Nr. 23403, 2016
Enhanced light emission from Ge micro bridges uniaxially strained beyond 3%
R Geiger, MJ Suess, RA Minamisawa, C Bonzon, G Schiefler, J Frigerio, ...
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on, 93-94, 2013
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