William Vandenberghe
William Vandenberghe
Associate Professor at U.T. Dallas, dept. Materials Science & Engineering
Verified email at - Homepage
Cited by
Cited by
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
A Laturia, ML Van de Put, WG Vandenberghe
npj 2D Materials and Applications 2 (1), 6, 2018
Tunnel field-effect transistor without gate-drain overlap
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Applied Physics Letters 91 (5), 2007
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
KH Kao, AS Verhulst, WG Vandenberghe, B Sorée, G Groeseneken, ...
Electron Devices, IEEE Transactions on 59 (2), 292-301, 2011
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 2010
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates
AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...
IEEE electron device letters 29 (12), 1398-1401, 2008
Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Journal of Applied Physics 104 (6), 2008
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and WxMo1–xTe2 Alloy
C Zhang, S Kc, Y Nie, C Liang, WG Vandenberghe, RC Longo, Y Zheng, ...
ACS nano 10 (8), 7370-7375, 2016
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets
KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ...
IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012
Figure of merit for and identification of sub-60 mV/decade devices
WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102, 013510, 2013
Impact of field-induced quantum confinement in tunneling field-effect devices
WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti
Applied Physics Letters 98 (14), 2011
Analytical model for point and line tunneling in a tunnel field-effect transistor
W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
2008 international conference on simulation of semiconductor processes and …, 2008
A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance
RM Imenabadi, M Saremi, WG Vandenberghe
IEEE transactions on electron devices 64 (11), 4752-4758, 2017
Analytical model for a tunnel field-effect transistor
WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth
G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ...
Advanced Materials 30 (36), 1803109, 2018
Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry
MV Fischetti, WG Vandenberghe
Physical Review B 93 (15), 155413, 2016
Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview
G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ...
Physical Review B 98 (11), 115416, 2018
Imperfect two-dimensional topological insulator field-effect transistors
WG Vandenberghe, MV Fischetti
Nature communications 8 (1), 14184, 2017
Advanced physics of electron transport in semiconductors and nanostructures
MV Fischetti, WG Vandenberghe
Springer, 2016
Tunnel field-effect transistor with gated tunnel barrier
WG Vandenberghe, AS Verhulst
US Patent 8,120,115, 2012
Microscopic dielectric permittivities of graphene nanoribbons and graphene
J Fang, WG Vandenberghe, MV Fischetti
Physical Review B 94 (4), 045318, 2016
The system can't perform the operation now. Try again later.
Articles 1–20