| STM study of the Ge growth mode on Si(001) substrates M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa Appl. Surf. Sci., 322-328, 1994 | 186 | 1994 |
| High-resolution Transmission Electron Microscopy of an Atomic Structure at a Si(001) Oxidation Front N Ikarashi, K Watanabe Physical Review B 62, 15989, 2000 | 57 | 2000 |
| A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019 | 56 | 2019 |
| Layered heteroepitaxial growth of germanium on Si(015) observed by scanning tunneling microscopy M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa Surface Science 301, 214-222, 1994 | 54 | 1994 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 48 | 2019 |
| The influence of incorporated nitrogen on the thermal stability of amorphous HfO2 and Hf silicate N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa, M Miyamura J. Appl. Phys. 100, 063507, 2006 | 28 | 2006 |
| 1.2nm HfSiON/SiON Stacked Gate Insulators for 65nm-node MISFETs M Saitoh, N Ikarashi, H Watanabe, S Fujieda, H Watanabe, T Iwamoto, ... International Conference on Solid State Devices and Materials, 2004 | 25 | 2004 |
| Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals K Watanabe Journal of Applied Physics 90, 4701-4707, 2001 | 25 | 2001 |
| Quantitative Characterization of Roughness at SiO2/Si Interfaces by Using Cross-sectional High-resolution Transmission Electron Microscopy N Ikarashi, K Watanabe Japan Journal of Applied Physics 39, 1278, 2000 | 25 | 2000 |
| Effect of Nitrogen Profile and Fluorine Incorporation on Negative-Bias Temperature Instability of Ultrathin Plasma-Nitrided SiON MOSFETs M Terai, K Watanabe, S Fujieda IEEE TRANSACTIONS ON ELECTRON DEVICES 54, 1658-1665, 2007 | 24 | 2007 |
| Multiple-Vt solutions in nanosheet technology for high performance and low power applications R Bao, K Watanabe, J Zhang, J Guo, H Zhou, A Gaul, M Sankarapandian, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2019 | 22 | 2019 |
| Thermal stability of a HfO2/SiO2 interface N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa Appl. Phys. Lett. 88, 101912, 2006 | 22 | 2006 |
| Low-Leakage and Highly-Reliable 1.5nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1mm CMOS, M Togo, K Watanabe, T Yamamoto, N Ikarashi, K Shiba, T Tatsumi, H Ono, ... Symposium on VLSI Technology, 2000 | 20 | 2000 |
| Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc Applied Physics Letters 118 (10), 2021 | 19 | 2021 |
| Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals K Watanabe Applied Physics Letters, 2940, 2000 | 18 | 2000 |
| Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals K Watanabe, M Togo, T Tatsumi Material Research Society 1999 Fall Meeting, 1999 | 18 | 1999 |
| Electrical Properties of 1.5-nm SiON Gate-Dielectric Using Radical Oxygen and Radical Nitrogen M Togo, K Watanabe, T Yamamoto, N Ikarashi, T Tatsumi, T Mogami IEEE Trans on Electron Devices 49, 1903-1909, 2002 | 14 | 2002 |
| Electrical Properties of 1.5-nm SiON Gate-Dielectric Using Radical Oxygen and Radical Nitrogen M Togo, K Watanabe, T Terai, Masayuki, Yamamoto, ... IEEE Transaction Electron Devices 49, 1736-1741, 2002 | 14 | 2002 |
| Atomic structure at a Si-nitrided/Si(001) surfaces N Ikarashi, K Watanabe, MI Yoshiyuki Journal of Applied Physics 90, 2683-2688, 2001 | 14* | 2001 |
| Annealing effect on native-oxide/Si (111) interfaces studied by second-harmonic generation H Hirayama, K Watanabe Physical Review B 51 (20), 14717, 1995 | 12 | 1995 |
Vamsi ParuchuriASM, IBM Research, University of UtahBestätigte E-Mail-Adresse bei asm.com
