| Germanium content dependence of radiation damage in strained Si/sub 1-x/Ge/sub x/epitaxial devices H Ohyama, J Vanhellemont, Y Takami, K Hayama, H Sunaga, ... IEEE transactions on nuclear science 41 (6), 2437-2442, 1994 | 47 | 1994 |
| Degradation of Si/sub 1-x/Ge/sub x/epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons H Ohyama, J Vanhellemont, Y Takami, K Hayama, H Sunaga, ... IEEE Transactions on Nuclear Science 42 (6), 1550-1557, 1995 | 42 | 1995 |
| Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons H Ohyama, J Vanhellemont, Y Takami, K Hayama, T Kudou, T Hakata, ... IEEE Transactions on Nuclear Science 43 (6), 3019-3026, 1996 | 30 | 1996 |
| Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs K Hayama, K Takakura, H Ohyama, JM Rafi, A Mercha, E Simoen, ... IEEE transactions on nuclear science 51 (6), 3795-3800, 2004 | 27 | 2004 |
| Data analysis on performance of PV system installed in south and north directions T Yamaguchi, M Kawakami, K Kitano, S Nakagawa, T Tokoro, T Nakano, ... 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of …, 2003 | 24 | 2003 |
| Short-channel radiation effect in 60 MeV proton irradiated 0.13 μm CMOS transistors E Simoen, A Mercha, A Morata, K Hayama, G Richardson, JM Rafi, ... IEEE Transactions on Nuclear Science 50 (6), 2426-2432, 2003 | 23 | 2003 |
| Degradation of Si1−xGex epitaxial devices by proton irradiation H Ohyama, K Hayama, J Vanhellemont, J Poortmans, M Caymax, ... Applied physics letters 69 (16), 2429-2431, 1996 | 22 | 1996 |
| Degradation of InGaAs pin photodiodes by neutron irradiation H Ohyama, J Vanhellemont, Y Takami, K Hayama, T Kudou, S Kohiki, ... Semiconductor science and technology 11 (10), 1461, 1996 | 18 | 1996 |
| Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature K Takakura, K Hayama, D Watanabe, H Ohyama, T Kudou, K Shigaki, ... Physica B: Condensed Matter 376, 403-406, 2006 | 17 | 2006 |
| An effect of snow for electric energy generation by 40 kW PV system S Nakagawa, T Tokoro, T Nakano, K Hayama, H Ohyama, T Yamaguchi 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of …, 2003 | 17 | 2003 |
| Degradation and recovery of proton irradiated Si/sub 1-x/Ge/sub x/epitaxial devices H Ohyama, J Vanhellemont, Y Takami, K Hayama, H Sunaga, ... IEEE Transactions on Nuclear Science 43 (6), 3089-3096, 1996 | 15 | 1996 |
| Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes H Ohyama, K Takakura, K Hayama, S Kuboyama, Y Deguchi, S Matsuda, ... Applied physics letters 82 (2), 296-298, 2003 | 13 | 2003 |
| Effect of oxygen radicals for epitaxial growth of Al2O3 on Si K Hayama, M Ishida, T Nakamura Japanese journal of applied physics 33 (1S), 496, 1994 | 13 | 1994 |
| Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin films K Takakura, T Kudou, K Hayama, K Shigaki, H Ohyama, K Kayamoto, ... Journal of Materials Science: Materials in Electronics 19, 167-170, 2008 | 12 | 2008 |
| Heteroepitaxial growth of Al2O3 film on Si using dimethylethylamine-alane and O2 K Hayama, T Togun, M Ishida Journal of crystal growth 179 (3-4), 433-437, 1997 | 12 | 1997 |
| Linear kink effect induced drain current hysteresis in ultra thin gate oxide FD-SOI MOSFETs K Hayama, H Ohyama, JM Rafi, A Mercha, E Simoen, C Claeys | 11 | 2004 |
| Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation JM Rafi, C Boulord, K Hayama, H Ohyama, F Campabadal, G Pellegrini, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2009 | 10 | 2009 |
| Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs JM Rafí, E Simoen, A Mercha, N Collaert, K Hayama, F Campabadal, ... Solid-state electronics 51 (9), 1201-1210, 2007 | 9 | 2007 |
| Investigation of back gate interface states by drain current hysteresis in PD-SOI n-MOSFETs K Hayama, K Takakura, S Okada, T Kudou, H Ohyama, JM Rafí, ... Physica B: Condensed Matter 376, 416-419, 2006 | 9 | 2006 |
| Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation K Hayama, K Takakura, H Ohyama, S Kuboyama, E Simoen, A Mercha, ... Physica B: Condensed Matter 401, 469-472, 2007 | 8 | 2007 |
