evangelisti f.
evangelisti f.
Verified email at fis.uniroma3.it
Cited by
Cited by
Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ...
Applied Physics Letters 72 (24), 3175-3177, 1998
SiGe intermixing in Ge/Si (100) islands
G Capellini, M De Seta, F Evangelisti
Applied Physics Letters 78 (3), 303-305, 2001
Atomic force microscopy lithography as a nanodevice development technique
A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ...
Nanotechnology 10 (4), 458, 1999
Nature of the dead layer in CdS and its effect on exciton reflectance spectra
F Evangelisti, A Frova, F Patella
Physical Review B 10 (10), 4253, 1974
Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition
G Capellini, L Di Gaspare, F Evangelisti, E Palange
Applied physics letters 70 (4), 493-495, 1997
Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure
M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti
Physical review letters 75 (18), 3352, 1995
Dependence of exciton reflectance on field and other surface characteristics: The case of InP
F Evangelisti, JU Fischbach, A Frova
Physical Review B 9 (4), 1516, 1974
Structural investigation of a-Si and a-Si:H using x-ray-absorption spectroscopy at the Si K edge
A Filipponi, F Evangelisti, M Benfatto, S Mobilio, CR Natoli
Physical Review B 40 (14), 9636, 1989
Photoemission studies of amorphous semiconductor heterojunctions
F Evangelisti
Journal of Non-Crystalline Solids 77, 969-977, 1985
Ordering self-assembled islands without substrate patterning
G Capellini, M De Seta, C Spinella, F Evangelisti
Applied physics letters 82 (11), 1772-1774, 2003
Electric-Field—Induced Interference Effects at the Ground Exciton Level in GaAs
F Evangelisti, A Frova, JU Fischbach
Physical Review Letters 29 (15), 1001, 1972
Intermixing-promoted scaling of Ge/Si (100) island sizes
M De Seta, G Capellini, F Evangelisti, C Spinella
Journal of applied physics 92 (1), 614-619, 2002
Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100)
E Palange, G Capellini, L Di Gaspare, F Evangelisti
Applied physics letters 68 (21), 2982-2984, 1996
Structure of vapor‐deposited Ge films as a function of substrate temperature
F Evangelisti, M Garozzo, G Conte
Journal of Applied Physics 53 (11), 7390-7396, 1982
Strain relaxation in high Ge content SiGe layers deposited on Si
G Capellini, M De Seta, Y Busby, M Pea, F Evangelisti, G Nicotra, ...
Journal of Applied Physics 107 (6), 063504, 2010
Ge/Si (001) photodetector for near infrared light
L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ...
Solid State Phenomena 54, 55-58, 1997
Direct evidence of C 60 chemical bonding on Si (100)
M De Seta, D Sanvitto, F Evangelisti
Physical Review B 59 (15), 9878, 1999
Exafs investigation of amorphous-to-crystal transition in ge
F Evangelisti, MG Proietti, A Balzarotti, F Comin, L Incoccia, S Mobilio
Solid State Communications 37 (5), 413-416, 1981
Structure of hydrogenated amorphous silicon-carbon alloys as investigated by extended x-ray-absorption fine structure
S Pascarelli, F Boscherini, S Mobilio, F Evangelisti
Physical Review B 45 (4), 1650, 1992
Self-ordering of a Ge island single layer induced by Si overgrowth
G Capellini, M De Seta, F Evangelisti, VA Zinovyev, G Vastola, ...
Physical review letters 96 (10), 106102, 2006
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