Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes AG Scheuermann, JP Lawrence, KW Kemp, T Ito, A Walsh, CED Chidsey, ...
Nature materials 15 (1), 99-105, 2016
220 2016 Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
205 2002 Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre
Applied physics letters 96 (15), 152908, 2010
186 2010 A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0 … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 024101, 2011
163 2011 Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
154 2007 Wide spectral photoresponse of layered platinum diselenide-based photodiodes C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ...
Nano letters 18 (3), 1794-1800, 2018
146 2018 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
143 2009 Air sensitivity of MoS2 , MoSe2 , MoTe2 , HfS2 , and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 125102, 2016
142 2016 Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 102902, 2009
124 2009 interface properties following rapid thermal processingBJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
96 2001 Electrical, structural, and chemical properties of films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 064113, 2008
81 2008 Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
76 2003 Interface of ultrathin HfO2 films deposited by UV-photo-CVD Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
71 2004 In situ passivation of metal-oxide-semiconductor capacitors with atomic-layer deposited gate dielectricE O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 022902, 2008
69 2008 Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ...
2D Materials 5 (3), 031002, 2018
66 2018 An investigation of capacitance-voltage hysteresis in metal/high-k /In0.53 Ga0.47 As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 144105, 2013
62 2013 Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
62 2010 Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
61 2019 Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ...
IEEE transactions on electron devices 59 (4), 1084-1090, 2012
61 2012 Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of the Electrochemical Society 155 (2), G13, 2007
59 2007