|The effect of polarity and surface states on the Fermi level at III-nitride surfaces|
P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar
Journal of Applied Physics 116 (12), 123701, 2014
|Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition|
F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (10), 105701, 2016
|Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD|
I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ...
Applied Physics Letters 112 (6), 062102, 2018
|Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN|
Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ...
Applied Physics Letters 105 (22), 222101, 2014
|On compensation in Si-doped AlN|
JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ...
Applied Physics Letters 112 (15), 152101, 2018
|KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode|
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 082110, 2015
|Schottky contact formation on polar and non-polar AlN|
P Reddy, I Bryan, Z Bryan, J Tweedie, R Kirste, R Collazo, Z Sitar
Journal of Applied Physics 116 (19), 194503, 2014
|Defect-free Ni/GaN Schottky barrier behavior with high temperature stability|
P Reddy, B Sarkar, F Kaess, M Gerhold, E Kohn, R Collazo, Z Sitar
Applied Physics Letters 110 (1), 011603, 2017
|6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation|
R Kirste, Q Guo, JH Dycus, A Franke, S Mita, B Sarkar, P Reddy, ...
Applied Physics Express 11 (8), 082101, 2018
|Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control|
P Reddy, MP Hoffmann, F Kaess, Z Bryan, I Bryan, M Bobea, A Klump, ...
Journal of Applied Physics 120 (18), 185704, 2016
|Charge neutrality levels, barrier heights, and band offsets at polar AlGaN|
P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ...
Applied Physics Letters 107 (9), 091603, 2015
|Point-defect nature of the ultraviolet absorption band in AlN|
D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ...
Physical Review Applied 9 (5), 054036, 2018
|Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene|
P Devi, P Reddy, S Arora, S Singh, C Ghanshyam, ML Singla
Journal of Nanoparticle Research 14 (10), 1172, 2012
|Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN|
P Reddy, S Washiyama, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar
Journal of Applied Physics 122 (24), 245702, 2017
|Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications|
D Alden, W Guo, R Kirste, F Kaess, I Bryan, T Troha, A Bagal, P Reddy, ...
Applied Physics Letters 108 (26), 261106, 2016
|Noninvasive stimulation of neurotypic cells using persistent photoconductivity of gallium nitride|
PJ Snyder, P Reddy, R Kirste, DR LaJeunesse, R Collazo, A Ivanisevic
ACS omega 3 (1), 615-621, 2018
|High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies|
P Reddy, S Washiyama, F Kaess, M Hayden Breckenridge, ...
Journal of Applied Physics 119 (14), 145702, 2016
|Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers|
P Reddy, F Kaess, J Tweedie, R Kirste, S Mita, R Collazo, Z Sitar
Applied Physics Letters 111 (15), 152101, 2017
|Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment|
B Sarkar, BB Haidet, P Reddy, R Kirste, R Collazo, Z Sitar
Applied Physics Express 10 (7), 071001, 2017
|The effect of illumination power density on carbon defect configuration in silicon doped GaN|
F Kaess, P Reddy, D Alden, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (23), 235705, 2016