Pramod Reddy
Pramod Reddy
Adroit Materials and North Carolina State University
Verified email at ncsu.edu
Title
Cited by
Cited by
Year
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar
Journal of Applied Physics 116 (12), 123701, 2014
612014
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (10), 105701, 2016
482016
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ...
Applied Physics Letters 112 (6), 062102, 2018
432018
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ...
Applied Physics Letters 105 (22), 222101, 2014
412014
On compensation in Si-doped AlN
JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ...
Applied Physics Letters 112 (15), 152101, 2018
382018
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 082110, 2015
372015
Schottky contact formation on polar and non-polar AlN
P Reddy, I Bryan, Z Bryan, J Tweedie, R Kirste, R Collazo, Z Sitar
Journal of Applied Physics 116 (19), 194503, 2014
262014
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
P Reddy, B Sarkar, F Kaess, M Gerhold, E Kohn, R Collazo, Z Sitar
Applied Physics Letters 110 (1), 011603, 2017
252017
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
R Kirste, Q Guo, JH Dycus, A Franke, S Mita, B Sarkar, P Reddy, ...
Applied Physics Express 11 (8), 082101, 2018
242018
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
P Reddy, MP Hoffmann, F Kaess, Z Bryan, I Bryan, M Bobea, A Klump, ...
Journal of Applied Physics 120 (18), 185704, 2016
242016
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ...
Applied Physics Letters 107 (9), 091603, 2015
242015
Point-defect nature of the ultraviolet absorption band in AlN
D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ...
Physical Review Applied 9 (5), 054036, 2018
232018
Sensing behavior study of silica-coated Ag nanoparticles deposited on glassy carbon toward nitrobenzene
P Devi, P Reddy, S Arora, S Singh, C Ghanshyam, ML Singla
Journal of Nanoparticle Research 14 (10), 1172, 2012
212012
Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN
P Reddy, S Washiyama, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar
Journal of Applied Physics 122 (24), 245702, 2017
192017
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
D Alden, W Guo, R Kirste, F Kaess, I Bryan, T Troha, A Bagal, P Reddy, ...
Applied Physics Letters 108 (26), 261106, 2016
192016
Noninvasive stimulation of neurotypic cells using persistent photoconductivity of gallium nitride
PJ Snyder, P Reddy, R Kirste, DR LaJeunesse, R Collazo, A Ivanisevic
ACS omega 3 (1), 615-621, 2018
142018
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
P Reddy, S Washiyama, F Kaess, M Hayden Breckenridge, ...
Journal of Applied Physics 119 (14), 145702, 2016
142016
Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers
P Reddy, F Kaess, J Tweedie, R Kirste, S Mita, R Collazo, Z Sitar
Applied Physics Letters 111 (15), 152101, 2017
112017
Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment
B Sarkar, BB Haidet, P Reddy, R Kirste, R Collazo, Z Sitar
Applied Physics Express 10 (7), 071001, 2017
112017
The effect of illumination power density on carbon defect configuration in silicon doped GaN
F Kaess, P Reddy, D Alden, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (23), 235705, 2016
112016
The system can't perform the operation now. Try again later.
Articles 1–20