| Effects of Ti buffer layer on retention and electrical characteristics of Cu-based conductive-bridge random access memory (CBRAM) B Attarimashalkoubeh, A Prakash, S Lee, J Song, J Woo, SH Misha, ... ECS Solid State Letters 3 (10), P120, 2014 | 30 | 2014 |
| Highly reliable resistive switching without an initial forming operation by defect engineering S Lee, D Lee, J Woo, E Cha, J Park, J Song, K Moon, Y Koo, B Attari, ... IEEE electron device letters 34 (12), 1515-1517, 2013 | 22 | 2013 |
| Non-linear IV characteristics of TiOy film by optimizing thickness and trap density for selector-less ReRAM N Tamanna, SH Misha, A Prakash, D Lee, J Woo, E Cha, ... ECS Solid State Letters 3 (10), P117, 2014 | 17 | 2014 |
| Chip-level CMOS co-integration of ReRAM-based non-volatile memories E Shahrabi, J Sandrini, B Attarimashalkoubeh, T Demirci, M Hadad, ... 2016 12th Conference on Ph. D. Research in Microelectronics and Electronics …, 2016 | 15 | 2016 |
| Scalable neuron circuit using conductive-bridge ram for pattern reconstructions JW Jang, B Attarimashalkoubeh, A Prakash, H Hwang, YH Jeong IEEE Transactions on Electron Devices 63 (6), 2610-2613, 2016 | 15 | 2016 |
| Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions YHJ Jun-Woo Jang, Behnoush Attarimashalkoubeh, Amit Prakash, Hyunsang Hwang, IEEE Transactions on Electron Devices, 2016 | 15* | 2016 |
| Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs J Sandrini, B Attarimashalkoubeh, E Shahrabi, I Krawczuk, Y Leblebici 2016 IEEE International Conference on the Science of Electrical Engineering …, 2016 | 12 | 2016 |
| Effect of hf metal layer on the switching characteristic of hfox-based resistive random access memory B Attarimashalkoubeh, J Sandrini, E Shahrabi, M Barlas, Y Leblebici 2016 12th Conference on Ph. D. Research in Microelectronics and Electronics …, 2016 | 6 | 2016 |
| ECS Solid State Lett. 2014, 3 B Attarimashalkoubeh, A Prakash, S Lee, J Song, J Woo, SH Misha, ... P120.[Google Scholar], 0 | 5 | |
| Novel 3D architecture of 1S1R B Attarimashalkoubeh, Y Leblebici 2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 1-2, 2019 | 1 | 2019 |
| Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs B Attarimashalkoubeh, J Sandrini, E Shahrabi, Y Leblebici 2017 47th European Solid-State Device Research Conference (ESSDERC), 152-155, 2017 | 1 | 2017 |
| In-depth Structure and Electrical Characteristics Study of HfOx-based Resistive Random Access Memories (ReRAMs) B Attarimashalkoubeh, Y Leblebici 2019 IEEE 31st International Conference on Microelectronics (MIEL), 79-82, 2019 | | 2019 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
