| Excellent Selector Characteristics of Nanoscalefor High-Density Bipolar ReRAM Applications M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ... IEEE Electron Device Letters 32 (11), 1579-1581, 2011 | 332 | 2011 |
| Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications J Lee, EM Bourim, W Lee, J Park, M Jo, S Jung, J Shin, H Hwang Applied Physics Letters 97 (17), 2010 | 185 | 2010 |
| High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... ACS nano 6 (9), 8166-8172, 2012 | 163 | 2012 |
| Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... 2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012 | 122 | 2012 |
| Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang Nanotechnology 22 (47), 475702, 2011 | 116 | 2011 |
| Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang Electron Device Letters, IEEE 32 (4), 476-478, 2011 | 113 | 2011 |
| Excellent Switching Uniformity of Cu-Doped Bilayer for Nonvolatile Memory Applications J Yoon, H Choi, D Lee, JB Park, J Lee, DJ Seong, Y Ju, M Chang, S Jung, ... Electron Device Letters, IEEE 30 (5), 457-459, 2009 | 106 | 2009 |
| Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang IEEE Electron Device Letters 33 (2), 236-238, 2011 | 90 | 2011 |
| Resistive-Switching Characteristics of $ hbox {Al}/hbox {Pr} _ {0.7} hbox {Ca} _ {0.3} hbox {MnO} _ {3} $ for Nonvolatile Memory Applications DJ Seong, M Hassan, H Choi, J Lee, J Yoon, JB Park, W Lee, MS Oh, ... Electron Device Letters, IEEE 30 (9), 919-921, 2009 | 79 | 2009 |
| Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ... Microelectronic Engineering 107, 33-36, 2013 | 72 | 2013 |
| Investigation of state stability of low-resistance state in resistive memory J Park, M Jo, EM Bourim, J Yoon, DJ Seong, J Lee, W Lee, H Hwang IEEE Electron Device Letters 31 (5), 485-487, 2010 | 68 | 2010 |
| Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... IEEE electron device letters 33 (5), 718-720, 2012 | 66 | 2012 |
| Effect of Scaling-Based RRAMs on Their Resistive Switching Characteristics S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ... IEEE electron device letters 32 (5), 671-673, 2011 | 60 | 2011 |
| Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile … D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 50 | 2009 |
| Noise-Analysis-Based Model of Filamentary Switching ReRAM With Stacks D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang Electron Device Letters, IEEE, 1-3, 2011 | 49 | 2011 |
| Improved switching uniformity and speed in filament-type RRAM using lightning rod effect J Park, M Jo, J Lee, S Jung, S Kim, W Lee, J Shin, H Hwang IEEE electron device letters 32 (1), 63-65, 2010 | 48 | 2010 |
| Resistive switching characteristics of ultra-thin TiOx J Park, S Jung, J Lee, W Lee, S Kim, J Shin, H Hwang Microelectronic Engineering, 2011 | 45 | 2011 |
| Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices S Kim, D Lee, J Park, S Jung, W Lee, J Shin, J Woo, G Choi, H Hwang Nanotechnology 23 (32), 325702, 2012 | 43 | 2012 |
| Quantized conductive filament formed by limited Cu source in sub-5nm era J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ... 2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011 | 43 | 2011 |
| Nanoscale resistive switching of a copper–carbon-mixed layer for nonvolatile memory applications H Choi, M Pyun, TW Kim, M Hasan, R Dong, J Lee, JB Park, J Yoon, ... IEEE electron device letters 30 (3), 302-304, 2009 | 40 | 2009 |
