| Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys MV Fischetti, SE Laux Journal of Applied Physics 80 (4), 2234-2252, 1996 | 1895 | 1996 |
| Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects MV Fischetti, SE Laux Physical Review B 38 (14), 9721, 1988 | 1301 | 1988 |
| Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering MV Fischetti, DA Neumayer, EA Cartier Journal of Applied Physics 90 (9), 4587-4608, 2001 | 1008 | 2001 |
| Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport MV Fischetti IEEE transactions on electron devices 38 (3), 634-649, 1991 | 816 | 1991 |
| Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim Journal of Applied Physics 94 (2), 1079-1095, 2003 | 625 | 2003 |
| Monte Carlo study of electron transport in silicon inversion layers MV Fischetti, SE Laux Physical Review B 48 (4), 2244, 1993 | 620 | 1993 |
| Silicon CMOS devices beyond scaling W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ... IBM Journal of Research and Development 50 (4.5), 339-361, 2006 | 617 | 2006 |
| Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go? Laux, Fischetti 1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992 | 428 | 1992 |
| Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti Journal of Applied physics 93 (11), 9298-9303, 2003 | 387 | 2003 |
| Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity S Jin, MV Fischetti, T Tang Journal of Applied Physics 102 (8), 2007 | 370 | 2007 |
| Quantum effects in the early universe. I. Influence of trace anomalies on homogeneous, isotropic, classical geometries MV Fischetti, JB Hartle, BL Hu Physical Review D 20 (8), 1757, 1979 | 359 | 1979 |
| Theory of high-field electron transport in silicon dioxide MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR Kirtley Physical Review B 31 (12), 8124, 1985 | 348 | 1985 |
| Monte Carlo device simulation: full band and beyond K Hess Springer Science & Business Media, 2012 | 341 | 2012 |
| Understanding hot‐electron transport in silicon devices: Is there a shortcut? MV Fischetti, SE Laux, E Crabbe Journal of Applied Physics 78 (2), 1058-1087, 1995 | 292 | 1995 |
| On the enhanced electron mobility in strained-silicon inversion layers MV Fischetti, F Gamiz, W Hänsch Journal of applied physics 92 (12), 7320-7324, 2002 | 283 | 2002 |
| Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion F Gamiz, MV Fischetti Journal of Applied Physics 89 (10), 5478-5487, 2001 | 256 | 2001 |
| Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection MV Fischetti Journal of applied physics 57 (8), 2860-2879, 1985 | 230 | 1985 |
| Hybrid-orientation technology (HOT): Opportunities and challenges M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ... IEEE Transactions on Electron Devices 53 (5), 965-978, 2006 | 222 | 2006 |
| Impact ionization in silicon E Cartier, MV Fischetti, EA Eklund, FR McFeely Applied Physics Letters 62 (25), 3339-3341, 1993 | 201 | 1993 |
| Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs S Jin, MV Fischetti, TW Tang IEEE Transactions on Electron Devices 54 (9), 2191-2203, 2007 | 199 | 2007 |
