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Jerry Woodall
Jerry Woodall
Verified email at ucdavis.edu - Homepage
Title
Cited by
Cited by
Year
Structure of GaAs (001)(2 4)− c (2 8) determined by scanning tunneling microscopy
MD Pashley, KW Haberern, W Friday, JM Woodall, PD Kirchner
Physical review letters 60 (21), 2176, 1988
6521988
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
AC Warren, JM Woodall, JL Freeouf, D Grischkowsky, DT McInturff, ...
Applied physics letters 57 (13), 1331-1333, 1990
5741990
Schottky barriers: An effective work function model
JL Freeouf, JM Woodall
Applied Physics Letters 39 (9), 727-729, 1981
5271981
Macroelectronics: Perspectives on technology and applications
RH Reuss, BR Chalamala, A Moussessian, MG Kane, A Kumar, ...
Proceedings of the IEEE 93 (7), 1239-1256, 2005
4302005
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ...
Journal of Applied Physics 65 (6), 2220-2237, 1989
3991989
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
MR Melloch, N Otsuka, JM Woodall, AC Warren, JL Freeouf
Applied physics letters 57 (15), 1531-1533, 1990
3001990
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
KP Schoen, JM Woodall, JA Cooper, MR Melloch
IEEE Transactions on electron devices 45 (7), 1595-1604, 1998
2821998
Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
JM Woodall, JL Freeouf, GD Pettit, T Jackson, P Kirchner
Journal of Vacuum Science and Technology 19 (3), 626-627, 1981
2721981
Unpinned (100) GaAs surfaces in air using photochemistry
SD Offsey, JM Woodall, AC Warren, PD Kirchner, TI Chappell, GD Pettit
Applied physics letters 48 (7), 475-477, 1986
2711986
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
RM Feenstra, JM Woodall, GD Pettit
Physical review letters 71 (8), 1176, 1993
2511993
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ...
Journal of applied physics 64 (10), 4843-4852, 1988
2501988
Carrier lifetime versus anneal in low temperature growth GaAs
ES Harmon, MR Melloch, JM Woodall, DD Nolte, N Otsuka, CL Chang
Applied physics letters 63 (16), 2248-2250, 1993
2381993
Structure and recombination in InGaAs/GaAs heterostructures
EA Fitzgerald, DG Ast, PD Kirchner, GD Pettit, JM Woodall
Journal of applied physics 63 (3), 693-703, 1988
2281988
The effect of fluorescent wavelength shifting on solar cell spectral response
HJ Hovel, RT Hodgson, JM Woodall
Solar Energy Materials 2 (1), 19-29, 1979
2251979
Liquid phase-enabled reaction of Al–Ga and Al–Ga–In–Sn alloys with water
JT Ziebarth, JM Woodall, RA Kramer, G Choi
international journal of hydrogen energy 36 (9), 5271-5279, 2011
2122011
EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
H Rupprecht, JM Woodall, GD Pettit
Applied Physics Letters 11 (3), 81-83, 1967
2101967
An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells
JM Woodall, HJ Hovel
Applied Physics Letters 30 (9), 492-493, 1977
2071977
High‐efficiency Ga1−xAlxAs–GaAs solar cells
JM Woodall, HJ Hovel
Applied Physics Letters 21 (8), 379-381, 1972
1951972
GaAs metallization: Some problems and trends
JM Woodall, JL Freeouf
Journal of Vacuum Science and Technology 19 (3), 794-798, 1981
1911981
Low-temperature grown III-V materials
MR Melloch, JM Woodall, ES Harmon, N Otsuka, FH Pollak, DD Nolte, ...
Annual Review of Materials Science 25 (1), 547-600, 1995
1721995
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