Exploration of sub-VT and near-VT 2T gain-cell memories for ultra-low power applications under technology scaling P Meinerzhagen, A Teman, R Giterman, A Burg, A Fish
Journal of Low Power Electronics and Applications 3 (2), 54-72, 2013
41 2013 Single-supply 3T gain-cell for low-voltage low-power applications R Giterman, A Teman, P Meinerzhagen, L Atias, A Burg, A Fish
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (1), 358-362, 2015
33 2015 Replica technique for adaptive refresh timing of gain-cell-embedded DRAM A Teman, P Meinerzhagen, R Giterman, A Fish, A Burg
IEEE Transactions on Circuits and Systems II: Express Briefs 61 (4), 259-263, 2014
33 2014 A low-voltage radiation-hardened 13T SRAM bitcell for ultralow power space applications L Atias, A Teman, R Giterman, P Meinerzhagen, A Fish
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (8 …, 2016
24 2016 An 800-MHz Mixed- R Giterman, A Fish, N Geuli, E Mentovich, A Burg, A Teman
IEEE Journal of Solid-State Circuits 53 (7), 2136-2148, 2018
23 2018 A 4-transistor nMOS-only logic-compatible gain-cell embedded DRAM with over 1.6-ms retention time at 700 mV in 28-nm FD-SOI R Giterman, A Fish, A Burg, A Teman
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (4), 1245-1256, 2017
22 2017 Area and energy-efficient complementary dual-modular redundancy dynamic memory for space applications R Giterman, L Atias, A Teman
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (2), 502-509, 2016
19 2016 Energy versus data integrity trade-offs in embedded high-density logic compatible dynamic memories A Teman, G Karakonstantis, R Giterman, P Meinerzhagen, A Burg
2015 Design, Automation & Test in Europe Conference & Exhibition (DATE), 489-494, 2015
19 2015 Aircraft catastrophic security system SG Kimmet
US Patent 6,573,839, 2003
19 * 2003 Gain-cell Embedded DRAMs for Low-power VLSI Systems-on-chip P Meinerzhagen, A Teman, R Giterman, N Edri, A Burg, A Fish
Springer International Publishing, 2018
16 2018 Approximate computing with unreliable dynamic memories S Ganapathy, A Teman, R Giterman, A Burg, G Karakonstantis
2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 1-4, 2015
16 2015 4T gain-cell with internal-feedback for ultra-low retention power at scaled CMOS nodes R Giterman, A Teman, P Meinerzhagen, A Burg, A Fish
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2177-2180, 2014
15 2014 An 800 Mhz mixed-VT 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications R Giterman, A Fish, N Geuli, E Mentovich, A Burg, A Teman
ESSCIRC 2017-43rd IEEE European Solid State Circuits Conference, 308-311, 2017
10 2017 Approach to integrated energy harvesting voltage source based on novel active TEG array system R Buzilo, B Likhterov, R Giterman, I Levi, A Fish, A Belenky
2014 IEEE Faible Tension Faible Consommation, 1-4, 2014
9 2014 Leakage power attack-resilient symmetrical 8t sram cell R Giterman, M Vicentowski, I Levi, Y Weizman, O Keren, A Fish
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (10 …, 2018
5 2018 GC-eDRAM with body-bias compensated readout and error detection in 28-nm FD-SOI R Giterman, A Bonetti, A Burg, A Teman
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (12), 2042-2046, 2019
4 2019 Hybrid GC-eDRAM/SRAM bitcell for robust low-power operation R Giterman, A Teman, P Meinerzhagen
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (12), 1362-1366, 2017
4 2017 A 7t security oriented sram bitcell R Giterman, O Keren, A Fish
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (8), 1396-1400, 2018
3 2018 Gain-cell embedded DRAM-based physical unclonable function R Giterman, Y Weizman, A Teman
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (12), 4208-4218, 2018
3 2018 A process compensated gain cell embedded-DRAM for ultra-low-power variation-aware design R Giterman, A Teman, P Meinerzhagen, A Fish, A Burg
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 1006-1009, 2016
3 2016 