| Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies RK Mondal, S Adhikari, V Chatterjee, S Pal Materials Research Bulletin 140, 111258, 2021 | 59 | 2021 |
| Effect of step-graded superlattice electron blocking layer on performance of AlGaN based deep-UV light emitting diodes RK Mondal, V Chatterjee, S Pal Physica E: Low-dimensional Systems and Nanostructures 108, 233-237, 2019 | 40 | 2019 |
| Optimization of structure parameters for highly efficient AlGaN based deep ultraviolet light emitting diodes RK Mondal, V Chatterjee, S Singh, SM Islam, S Pal Superlattices and Microstructures 112, 339-352, 2017 | 25 | 2017 |
| AlInGaN-based superlattice p-region for improvement of performance of deep UV LEDs RK Mondal, V Chatterjee, S Pal Optical Materials 104, 109846, 2020 | 20 | 2020 |
| Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer RK Mondal, V Chatterjee, S Prasad, S Pal Semiconductor Science and Technology 35 (5), 055031, 2020 | 15 | 2020 |
| Efficient Carrier Transport for AlGaN-Based Deep-UV LEDs With Graded Superlattice p-AlGaN RK Mondal, V Chatterjee, S Pal IEEE Transactions on Electron Devices 67 (4), 1674-1679, 2020 | 13 | 2020 |
| Double-side step-graded AlGaN electron blocking layer for nearly droop-free GaN-based blue LEDs S Prasad, RK Mondal, V Chatterjee, S Pal Superlattices and Microstructures 132, 106167, 2019 | 7 | 2019 |
| Hole Transport in Ultraviolet Light-Emitting Diode via p-Type Injection Channel RK Mondal, V Chatterjee, S Pal IEEE Transactions on Electron Devices 68 (5), 2320-2325, 2021 | 5 | 2021 |
| Light extraction efficiency improvement through double sided periodic photonic structures for deep UV light emitting diodes RK Mondal, V Pandey, V Chatterjee, S Pal Optical and Quantum Electronics 53, 1-13, 2021 | 2 | 2021 |
| Correlation between performance and compositional grading in quantum well of deep UV-LED RK Mondal, V Chatterjee, S Pal Optik 210, 164510, 2020 | 2 | 2020 |
| Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes RK Mondal, Z Xiong, MK Ghimire, R Lingaparthi, D Nethaji, ... Advanced Optical Materials, 2302602, 2024 | | 2024 |
| Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights YJ Kim, MR Kumar, GM Kumar, M Kim Applied Physics Letters 123 (25), 2023 | | 2023 |
| Performance Enhancement of Deep Ultra-Violet LEDs with Electrode Design Optimization RK Mondal, V Pandey, V Chatterjee, S Pal | | 2018 |
| Design and fabrication of AlGaN based deep ultraviolet light emitting diodes RK Mondal Ghaziabad, 0 | | |
Vijay ChatterjeeSCHOOL OF CHEMISTRY, UNIVERSITY OF BRISTOL, UNITED KINGDOMVerified email at bristol.ac.uk
