| Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015 | 176 | 2015 |
| Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory S Wang, H Lee, F Ebrahimi, PK Amiri, KL Wang, P Gupta IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016 | 114 | 2016 |
| Magnetoelectric random access memory-based circuit design by using voltage-controlled magnetic anisotropy in magnetic tunnel junctions KL Wang, H Lee, PK Amiri IEEE Transactions on Nanotechnology 14 (6), 992-997, 2015 | 66 | 2015 |
| Design of a fast and low-power sense amplifier and writing circuit for high-speed MRAM H Lee, JG Alzate, R Dorrance, XQ Cai, D Marković, PK Amiri IEEE Transactions on Magnetics 51 (5), 1-7, 2014 | 61 | 2014 |
| Write error rate and read disturbance in electric-field-controlled magnetic random-access memory C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ... IEEE Magnetics Letters 8, 1-5, 2016 | 57 | 2016 |
| A ReRAM-based nonvolatile flip-flop with self-write-termination scheme for frequent-OFF fast-wake-up nonvolatile processors A Lee, CP Lo, CC Lin, WH Chen, KH Hsu, Z Wang, F Su, Z Yuan, Q Wei, ... IEEE Journal of Solid-State Circuits 52 (8), 2194-2207, 2017 | 54 | 2017 |
| Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction H Lee, F Ebrahimi, PK Amiri, KL Wang AIP Advances 7 (5), 2017 | 51 | 2017 |
| Fast and low-power sense amplifier and writing circuit for high-speed MRAM KL Wang, PK Amiri, H Lee, JG Alzate US Patent 9,672,886, 2017 | 33 | 2017 |
| Analysis and compact modeling of magnetic tunnel junctions utilizing voltage-controlled magnetic anisotropy H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Transactions on Magnetics 54 (4), 1-9, 2018 | 32 | 2018 |
| Low-power, high-density spintronic programmable logic with voltage-gated spin Hall effect in magnetic tunnel junctions H Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Magnetics Letters 7, 1-5, 2016 | 31 | 2016 |
| Accurate extraction of the trap depth from RTS noise data by including poly depletion effect and surface potential variation in MOSFETs H Lee, Y Yoon, S Cho, H Shin IEICE transactions on electronics 90 (5), 968-972, 2007 | 28 | 2007 |
| Low RA magnetic tunnel junction arrays in conjunction with low switching current and high breakdown voltage for STT-MRAM at 10 nm and beyond C Park, H Lee, C Ching, J Ahn, R Wang, M Pakala, SH Kang 2018 IEEE Symposium on VLSI Technology, 185-186, 2018 | 21 | 2018 |
| A word line pulse circuit technique for reliable magnetoelectric random access memory H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (7 …, 2017 | 21 | 2017 |
| A spintronic voltage-controlled stochastic oscillator for event-driven random sampling H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Electron Device Letters 38 (2), 281-284, 2016 | 20 | 2016 |
| Analog to stochastic bit stream converter utilizing voltage-assisted spin Hall effect H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Electron Device Letters 38 (9), 1343-1346, 2017 | 19 | 2017 |
| MTJ variation monitor-assisted adaptive MRAM write S Wang, H Lee, C Grezes, P Khalili, KL Wang, P Gupta Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016 | 17 | 2016 |
| Simultaneous extraction of locations and energies of two independent traps in gate oxide from four-level random telegraph signal noise S Yang, H Lee, H Shin Japanese journal of applied physics 47 (4S), 2606, 2008 | 17 | 2008 |
| Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array H Lee, C Park, SH Kang US Patent 10,483,457, 2019 | 16 | 2019 |
| Array-level analysis of magneto-electric random-access memory for high-performance embedded applications H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Magnetics Letters 8, 1-5, 2017 | 14 | 2017 |
| Source line sensing in magneto-electric random-access memory to reduce read disturbance and improve sensing margin H Lee, C Grezes, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Magnetics Letters 7, 1-5, 2016 | 14 | 2016 |
Kang L. WangElectrical Engineering DepartmentVerified email at ee.ucla.edu
