Assaf Lahav
Assaf Lahav
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Color pattern and pixel level binning for APS image sensor using 2× 2 photodiode sharing scheme
A Lahav, D Cohen
US Patent 7,773,138, 2010
Kirana: a solid-state megapixel uCMOS image sensor for ultrahigh speed imaging
J Crooks, B Marsh, R Turchetta, K Taylor, W Chan, A Lahav, A Fenigstein
Sensors, cameras, and systems for industrial and scientific applications XIV …, 2013
Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology
A Fenigstein, Z Kuritsky, A Lahav, I Naot, Y Roizin
US Patent 7,671,396, 2010
Localized effects of microwave radiation on the intact eye lens in culture conditions
A Dovrat, R Berenson, E Bormusov, A Lahav, T Lustman, N Sharon, ...
Bioelectromagnetics: Journal of the Bioelectromagnetics Society, The Society …, 2005
Optimization of random telegraph noise non uniformity in a CMOS pixel with a pinned-photodiode
A Lahav, D Veinger, A Fenigstein, A Shiwalkar
Proc. Int. Image Sens. Workshop, 230-234, 2007
CMOS image sensor with wide (intra-scene) dynamic range
A Lahav, A Fenigstein
US Patent 8,279,328, 2012
Large-format medical X-ray CMOS image sensor for high resolution high frame rate applications
R Reshef, T Leitner, S Alfassi, E Sarig, N Golan, O Berman, A Fenigstein, ...
Proc. Int. Image Sens. Workshop, 1-4, 2009
Non-thermal electromagnetic radiation damage to lens epithelium
E Bormusov, UP Andley, N Sharon, L Schächter, A Lahav, A Dovrat
The open ophthalmology journal 2, 102, 2008
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors
P Martin-Gonthier, E Havard, P Magnan
Electronics letters 46 (19), 1323-1324, 2010
Method, system, and computer program product for restricting access to a network using a network communications device
KS Bhogal, N Ishmael Jr, MS Sidhu
US Patent 7,248,563, 2007
Ultra-high speed imaging at megaframes per second with a megapixel CMOS image sensor
J Crooks, B Marsh, R Turchetta, K Taylor, W Chan, A Lahav, A Fenigstein
International Image Sensor Workshop, 2013
Image sensor pixel with memory node having buried channel and diode portions
A Lahav, A Fenigstein, Y Roizin, A Strum
US Patent 9,729,810, 2017
Enhanced X-ray CMOS sensor panel for radio and fluoro application using a low noise charge amplifier wixel with a partially pinned PD
A Lahav, R Reshef, A Fenigstein
Proc. Int. Image Sensor Workshop (IISW), 1-4, 2011
A 4e-noise 2/3-inch global shutter 1920x1080P120 CMOS-Imager
P Centen, S Lehr, S Roth, J Rotte, F Heizmann, A Momin, R Dohmen, ...
Proc. of IISW, 409-412, 2013
Shared readout low noise global shutter image sensor
A Lahav, A Fenigstein
US Patent 9,160,956, 2015
CMOS image sensor 3T Nwell photodiode pixel SPICE model
T Reiner, B Mishori, T Leitner, A Horovitz, Y Vainbaum, M Hakim, A Lahav, ...
2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel …, 2004
High performance 2.5 um global shutter pixel with new designed light-pipe structure
T Yokoyama, M Tsutsui, Y Nishi, I Mizuno, V Dmitry, A Lahav
2018 IEEE International Electron Devices Meeting (IEDM), 10.5. 1-10.5. 4, 2018
Development of Low Noise Memory Node in a 2.8um Global Shutter Pixel with Dual Transfer
ABAL Masafumi Tsutsui , Tatsuya Hirata , Keishi Tachikawa , Ikuo Mizuno ...
Proc. Int. Image Sensor Workshop, 2017
IR enhanced global shutter pixel for high speed applications
A Lahav, A Birman, D Veinger, A Fenigstein, D Zhang, D Van Blerkom
International Image Sensor Workshop, 2013
Design of photo-electron barrier for the Memory Node of a Global Shutter pixel based on a Pinned Photodiode
A Lahav, B Adi, C Muriel, L Tomer, F Amos
Proc. of 2009 International Image Sensor Workshop, Bergen, NORWAY, 2009
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