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Zhenyu Wang
Zhenyu Wang
Doctoral Assistant, EPFL – École polytechnique fédérale de Lausanne
Verified email at epfl.ch
Title
Cited by
Cited by
Year
Logic-in-memory based on an atomically thin semiconductor
G Migliato Marega, Y Zhao, A Avsar, Z Wang, M Tripathi, A Radenovic, ...
Nature 587 (7832), 72-77, 2020
2922020
Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition
Z Wang, CY Cheon, M Tripathi, GM Marega, Y Zhao, HG Ji, M Macha, ...
ACS nano 15 (11), 18403-18410, 2021
262021
Super-resolved optical mapping of reactive sulfur-vacancies in two-dimensional transition Metal Dichalcogenides
M Zhang, M Lihter, TH Chen, M Macha, A Rayabharam, K Banjac, Y Zhao, ...
ACS nano 15 (4), 7168-7178, 2021
262021
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2
G Migliato Marega, Z Wang, M Paliy, G Giusi, S Strangio, F Castiglione, ...
ACS nano 16 (3), 3684-3694, 2022
242022
Electrical spectroscopy of defect states and their hybridization in monolayer MoS2
Y Zhao, M Tripathi, K Čerņevičs, A Avsar, HG Ji, JF Gonzalez Marin, ...
Nature communications 14 (1), 44, 2023
212023
Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates
E Reato, P Palacios, B Uzlu, M Saeed, A Grundmann, Z Wang, ...
Advanced Materials 34 (48), 2108469, 2022
182022
Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD
Z Wang, M Tripathi, Z Golsanamlou, P Kumari, G Lovarelli, F Mazziotti, ...
Advanced Materials 35 (14), 2209371, 2023
122023
Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN
A Piacentini, D Marian, DS Schneider, E González Marín, Z Wang, M Otto, ...
Advanced Electronic Materials 8 (9), 2200123, 2022
122022
Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification
B Erbas, A Conde-Rubio, X Liu, J Pernollet, Z Wang, A Bertsch, M Penedo, ...
Microsystems & Nanoengineering 10 (1), 28, 2024
22024
A large-scale integrated vector–matrix multiplication processor based on monolayer molybdenum disulfide memories
G Migliato Marega, HG Ji, Z Wang, G Pasquale, M Tripathi, A Radenovic, ...
Nature Electronics 6 (12), 991-998, 2023
22023
MoS2/graphene Lateral Heterostructure Field Effect Transistors
DS Schneider, E Reato, L Lucchesi, Z Wang, A Piacetini, J Bolten, ...
2021 Device Research Conference (DRC), 1-2, 2021
12021
Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation
A Piacentini, D Schneider, M Otto, B Canto, Z Wang, A Radenovic, A Kis, ...
2021 Device Research Conference (DRC), 1-2, 2021
2021
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