A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ...
Advanced Materials 23 (10), 1277-1281, 2011
452 2011 Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films C Wang, K Jin, Z Xu, L Wang, C Ge, H Lu, H Guo, M He, G Yang
Applied Physics Letters 98 (19), 2011
391 2011 Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor JT Yang, C Ge, JY Du, HY Huang, M He, C Wang, HB Lu, GZ Yang, KJ Jin
Advanced Materials 30 (34), 1801548, 2018
375 2018 Ultrahigh energy storage in superparaelectric relaxor ferroelectrics H Pan, S Lan, S Xu, Q Zhang, H Yao, Y Liu, F Meng, EJ Guo, L Gu, D Yi, ...
Science 374 (6563), 100-104, 2021
310 2021 Low-threshold topological nanolasers based on the second-order corner state W Zhang, X Xie, H Hao, J Dang, S Xiao, S Shi, H Ni, Z Niu, C Wang, K Jin, ...
Light: Science & Applications 9 (1), 109, 2020
226 2020 Positive colossal magnetoresistance from interface effect in K Jin, H Lu, Q Zhou, K Zhao, B Cheng, Z Chen, Y Zhou, GZ Yang
Physical Review B 71 (18), 184428, 2005
182 2005 Reproducible ultrathin ferroelectric domain switching for high‐performance neuromorphic computing J Li, C Ge, J Du, C Wang, G Yang, K Jin
Advanced Materials 32 (7), 1905764, 2020
174 2020 Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories Z Xu, K Jin, L Gu, Y Jin, C Ge, C Wang, H Guo, H Lu, R Zhao, G Yang
small 8 (8), 1279-1284, 2012
164 2012 A ferrite synaptic transistor with topotactic transformation C Ge, C Liu, Q Zhou, Q Zhang, J Du, J Li, C Wang, L Gu, G Yang, K Jin
Advanced Materials 31 (19), 1900379, 2019
148 2019 Interfacial oxygen vacancies as a potential cause of hysteresis in perovskite solar cells F Zhang, W Ma, H Guo, Y Zhao, X Shan, K Jin, H Tian, Q Zhao, D Yu, X Lu, ...
Chemistry of Materials 28 (3), 802-812, 2016
139 2016 Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors GZ Liu, C Wang, CC Wang, J Qiu, M He, J Xing, KJ Jin, HB Lu, GZ Yang
Applied Physics Letters 92 (12), 2008
124 2008 Electrolyte‐gated synaptic transistor with oxygen ions HY Huang, C Ge, QH Zhang, CX Liu, JY Du, JK Li, C Wang, L Gu, ...
Advanced Functional Materials 29 (29), 1902702, 2019
119 2019 Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors G Li, D Xie, H Zhong, Z Zhang, X Fu, Q Zhou, Q Li, H Ni, J Wang, E Guo, ...
Nature communications 13 (1), 1729, 2022
117 2022 Dember effect induced photovoltage in perovskite pn heterojunctions KJ Jin, K Zhao, HB Lu, L Liao, GZ Yang
Applied Physics Letters 91 (8), 2007
115 2007 High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions HB Lu, SY Dai, ZH Chen, YL Zhou, BL Cheng, KJ Jin, LF Liu, GZ Yang, ...
Applied Physics Letters 86 (3), 2005
115 2005 Oxygen vacancy induced room-temperature metal–insulator transition in nickelate films and its potential application in photovoltaics L Wang, S Dash, L Chang, L You, Y Feng, X He, K Jin, Y Zhou, HG Ong, ...
ACS applied materials & interfaces 8 (15), 9769-9776, 2016
112 2016 Picosecond photoelectric characteristic in La0. 7Sr0. 3MnO3∕ Si pn junctions HB Lu, KJ Jin, YH Huang, M He, K Zhao, BL Cheng, ZH Chen, YL Zhou, ...
Applied Physics Letters 86 (24), 2005
111 2005 Transient lateral photovoltaic effect in pn heterojunctions of La0. 7Sr0. 3MnO3 and Si K Zhao, K Jin, H Lu, Y Huang, Q Zhou, M He, Z Chen, Y Zhou, G Yang
Applied Physics Letters 88 (14), 2006
104 2006 Positive colossal magnetoresistance in a multilayer p–n heterostructure of Sr-doped HB Lu, GZ Yang, ZH Chen, SY Dai, YL Zhou, KJ Jin, BL Cheng, M He, ...
Applied physics letters 84 (24), 5007-5009, 2004
104 2004 Ultraviolet fast-response photoelectric effect in tilted orientation SrTiO3 single crystals K Zhao, K Jin, Y Huang, S Zhao, H Lu, M He, Z Chen, Y Zhou, G Yang
Applied physics letters 89 (17), 2006
93 2006 