Yordan M. Georgiev, PhD
Yordan M. Georgiev, PhD
Head of Nanofabrication, I-te of Ion Beam Phys. & Mat. Res., Helmholtz-Centrum Dresden-Rossendorf
Verified email at hzdr.de
Cited by
Cited by
Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist
W Henschel, YM Georgiev, H Kurz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
New generation electron beam resists: a review
AS Gangnaik, YM Georgiev, JD Holmes
Chemistry of Materials 29 (5), 1898-1917, 2017
Organo-arsenic molecular layers on silicon for high-density doping
J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ...
ACS applied materials & interfaces 7 (28), 15514-15521, 2015
Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer
C Cummins, A Gangnaik, RA Kelly, D Borah, J O'Connell, N Petkov, ...
Nanoscale 7 (15), 6712-6721, 2015
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu
Sensors and Actuators B: Chemical 183, 1-10, 2013
Highly selective etch process for silicon-on-insulator nano-devices
T Wahlbrink, T Mollenhauer, YM Georgiev, W Henschel, JK Efavi, ...
Microelectronic Engineering 78, 212-217, 2005
Cognitive correlates of α4β2 nicotinic acetylcholine receptors in mild Alzheimer’s dementia
O Sabri, PM Meyer, S Gräf, S Hesse, S Wilke, GA Becker, M Rullmann, ...
Brain 141 (6), 1840-1854, 2018
Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist
YM Georgiev, W Henschel, A Fuchs, H Kurz
Vacuum 77 (2), 117-123, 2005
Interferometric in situ alignment for UV-based nanoimprint
A Fuchs, B Vratzov, T Wahlbrink, Y Georgiev, H Kurz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
Supercritical drying process for high aspect-ratio HSQ nano-structures
T Wahlbrink, D Küpper, YM Georgiev, J Bolten, M Möller, D Küpper, ...
Microelectronic engineering 83 (4-9), 1124-1127, 2006
Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
E Buitrago, MFB Badia, YM Georgiev, R Yu, O Lotty, JD Holmes, ...
Sensors and Actuators B: Chemical 199, 291-300, 2014
Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists
A Gangnaik, YM Georgiev, B McCarthy, N Petkov, V Djara, JD Holmes
Microelectronic engineering 123, 126-130, 2014
Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers
C Cummins, A Gangnaik, RA Kelly, AJ Hydes, J O’Connell, N Petkov, ...
Chemistry of Materials 27 (17), 6091-6096, 2015
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ...
Journal of Materials Chemistry C 2 (43), 9248-9257, 2014
Junctionless nanowire transistor fabricated with high mobility Ge channel
R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ...
physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014
Solvent vapor annealing of block copolymers in confined topographies: Commensurability considerations for nanolithography
C Cummins, RA Kelly, A Gangnaik, YM Georgiev, N Petkov, JD Holmes, ...
Macromolecular rapid communications 36 (8), 762-767, 2015
Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices
YM Georgiev, N Petkov, B McCarthy, R Yu, V Djara, D O’Connell, O Lotty, ...
Microelectronic engineering 118, 47-53, 2014
Observation of ultrafast solid-density plasma dynamics using femtosecond X-ray pulses from a free-electron laser
T Kluge, M Rödel, J Metzkes-Ng, A Pelka, AL Garcia, I Prencipe, ...
Physical Review X 8 (3), 031068, 2018
Electrical characterization and parameter extraction of junctionless nanowire transistors
T Rudenko, S Barraud, YM Georgiev, V Lysenko, AN Nazarov
Journal of Nano Research 39, 17-33, 2016
Impurity gettering by high-energy ion implantation in silicon beyond the projected range
YM Gueorguiev, R Kögler, A Peeva, D Panknin, A Mücklich, RA Yankov, ...
Applied physics letters 75 (22), 3467-3469, 1999
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