InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 419 | 2012 |
AlGaN/GaN MOS-HEMT WithDielectric andInterfacial Passivation Layer Grown by Atomic Layer Deposition Y Yue, Y Hao, J Zhang, J Ni, W Mao, Q Feng, L Liu IEEE electron device letters 29 (8), 838-840, 2008 | 177 | 2008 |
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ... Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013 | 127 | 2013 |
Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ... IEEE electron device letters 34 (3), 378-380, 2013 | 79 | 2013 |
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ... IEEE electron device letters 33 (5), 661-663, 2012 | 55 | 2012 |
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ... Applied Physics Express 6 (1), 016503, 2012 | 52 | 2012 |
GaN MOS-HEMT using ultra-thin Al2O3 dielectric grown by atomic layer deposition Y Yuan-Zheng, H Yue, F Qian, Z Jin-Cheng, M Xiao-Hua, N Jin-Yu Chinese Physics Letters 24 (8), 2419, 2007 | 52 | 2007 |
Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ... IEEE Transactions on Electron Devices 61 (3), 747-754, 2014 | 47 | 2014 |
A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress Y Yuan-Zheng, H Yue, Z Jin-Cheng, F Qian, N Jin-Yu, M Xiao-Hua Chinese Physics B 17 (4), 1405, 2008 | 38 | 2008 |
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing Applied Physics Express 7 (3), 031002, 2014 | 34 | 2014 |
Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition YZ Yue, Y Hao, Q Feng, JC Zhang, XH Ma, JY Ni Science in China Series E: Technological Sciences 52 (9), 2762-2766, 2009 | 29 | 2009 |
The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment F Qian, T Yuan, B Zhi-Wei, Y Yuan-Zheng, N Jin-Yu, Z Jin-Cheng, H Yue, ... Chinese Physics B 18 (7), 3014, 2009 | 18 | 2009 |
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ... Applied Physics Letters 105 (17), 2014 | 16 | 2014 |
AlGaN/GaN MOS-HEMT with stack gate HfO2/Al2O3 structure grown by atomic layer deposition YZ Yue, Y Hao, JC Zhang 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 1-4, 2008 | 16 | 2008 |
Semiconductor devices with regrown contacts and methods of fabrication JH Huang, Y Yue US Patent 10,403,718, 2019 | 14 | 2019 |
The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N2 plasma pretreatment Q Feng, Y Hao, YZ Yue Semiconductor science and technology 24 (2), 025030, 2009 | 13 | 2009 |
Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Y Yue, X Yan, W Li, HG Xing, D Jena, P Fay Journal of Vacuum Science & Technology B 32 (6), 2014 | 11 | 2014 |
Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation R Wang, G Li, J Guo, B Song, J Verma, Z Hu, Y Yue, K Nomoto, ... 2013 IEEE International Electron Devices Meeting, 28.6. 1-28.6. 4, 2013 | 11 | 2013 |
Semiconductor devices with regrown contacts and methods of fabrication JH Huang, Y Yue US Patent 10,355,085, 2019 | 10 | 2019 |
Multi-nanolayered VO2/Sapphire Thin Film via Spinodal Decomposition G Sun, X Cao, Y Yue, X Gao, S Long, N Li, R Li, H Luo, P Jin Scientific Reports 8 (1), 5342, 2018 | 9 | 2018 |