Follow
JIYUAN ZHENG
JIYUAN ZHENG
Verified email at tsinghua.edu.cn
Title
Cited by
Cited by
Year
A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure
J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ...
Applied Physics Letters 109 (24), 241105, 2016
412016
Green and red light-emitting diodes based on multilayer InGaN/GaN dots grown by growth interruption method
W Lv, L Wang, J Wang, Y Xing, J Zheng, D Yang, Z Hao, Y Luo
Japanese Journal of Applied Physics 52 (8S), 08JG13, 2013
352013
Digital alloy InAlAs avalanche photodiodes
J Zheng, Y Yuan, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ...
Journal of Lightwave Technology 36 (17), 3580-3585, 2018
292018
Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys
Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, A Ghosh, ...
Photonics Research 6 (8), 794-799, 2018
232018
AlInAsSb impact ionization coefficients
Y Yuan, J Zheng, AK Rockwell, SD March, SR Bank, JC Campbell
IEEE Photonics Technology Letters 31 (4), 315-318, 2019
172019
A GaN p–i–p–i–n Ultraviolet Avalanche Photodiode
ZHENG Ji-Yuan(郑纪元)1, WANG Lai(汪莱)1**, HAO Zhi-Biao(郝智彪)1, LUO Yi(罗 ...
CHIN. PHYS. LETT. 29 (9), 097804, 2012
152012
Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure
J Zheng, L Wang, D Yang, J Yu, X Meng, Z Hao, C Sun, B Xiong, Y Luo, ...
Scientific reports 6 (1), 1-8, 2016
132016
III-V on silicon avalanche photodiodes by heteroepitaxy
Y Yuan, D Jung, K Sun, J Zheng, AH Jones, JE Bowers, JC Campbell
Optics letters 44 (14), 3538-3541, 2019
122019
Comparison of Different Period Digital Alloy AlInAsSb Avalanche Photodiodes
Y Yuan, AK Rockwell, Y Peng, J Zheng, SD March, AH Jones, M Ren, ...
Journal of Lightwave Technology 37 (14), 3647-3654, 2019
122019
Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition
J Zheng, AH Jones, Y Tan, AK Rockwell, S March, SZ Ahmed, CA Dukes, ...
Applied Physics Letters 115 (12), 122105, 2019
112019
The influence of structure parameter on GaN/AlN periodically stacked structure avalanche photodiode
J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ...
IEEE Photonics Technology Letters 29 (24), 2187-2190, 2017
112017
Theoretical study on interfacial impact ionization in AlN/GaN periodically stacked structure
J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ...
Applied Physics Express 10 (7), 071002, 2017
112017
Triple-mesa avalanche photodiodes with very low surface dark current
Y Yuan, Y Li, J Abell, JY Zheng, K Sun, C Pinzone, JC Campbell
Optics Express 27 (16), 22923-22929, 2019
82019
Near ultraviolet enhanced 4H-SiC Schottky diode
Y Shen, AH Jones, Y Yuan, J Zheng, Y Peng, B VanMil, K Olver, ...
Applied Physics Letters 115 (26), 261101, 2019
72019
Strain effect on band structure of InAlAs digital alloy
J Zheng, Y Tan, Y Yuan, AW Ghosh, JC Campbell
Journal of Applied Physics 125 (8), 082514, 2019
72019
Full band Monte Carlo simulation of AlInAsSb digital alloys
J Zheng, SZ Ahmed, Y Yuan, A Jones, Y Tan, AK Rockwell, SD March, ...
InfoMat 2 (6), 1236-1240, 2020
62020
Simulations for InAlAs digital alloy avalanche photodiodes
J Zheng, Y Yuan, Y Tan, Y Peng, A Rockwell, SR Bank, AW Ghosh, ...
Applied Physics Letters 115 (17), 171106, 2019
62019
Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
J Yu, L Wang, D Yang, J Zheng, Y Xing, Z Hao, Y Luo, C Sun, Y Han, ...
Scientific reports 6 (1), 1-8, 2016
62016
Photoelectrochemistry of Self‐Limiting Electrodeposition of Ni Film onto GaAs
Y Xu, R Ahmed, J Zheng, ER Hoglund, Q Lin, E Berretti, A Lavacchi, ...
Small 16 (39), 2003112, 2020
52020
Photonics Res. 6, 794 (2018)
Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ...
5
The system can't perform the operation now. Try again later.
Articles 1–20