Semiconductor manufacturing using modular substrates M Antonell, EC Houge, N Patel, LE Plew, C Vartuli
US Patent 6,713,409, 2004
205 2004 Application of focused ion beam lift‐out specimen preparation to TEM, SEM, STEM, AES and SIMS analysis FA Stevie, CB Vartuli, LA Giannuzzi, TL Shofner, SR Brown, B Rossie, ...
Surface and Interface Analysis: An International Journal devoted to the …, 2001
135 2001 Silicon-on-plastic semiconductor device and method of making the same JC Costa, DM Shuttleworth, MJ Antonell
US Patent 9,583,414, 2017
77 2017 Comprehensive traffic control system MR Elsheemy
US Patent 10,121,370, 2018
74 2018 Composition dependence of solid-phase epitaxy in silicon-germanium alloys: Experiment and theory TE Haynes, MJ Antonell, CA Lee, KS Jones
Physical Review B 51 (12), 7762, 1995
53 1995 Method of manufacture for a semiconductor device JC Costa, DM Shuttleworth, MJ Antonell
US Patent 10,062,637, 2018
46 2018 Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy MJ Antonell, CR Abernathy, A Sher, M Berding, M Van Schilfgaarde, ...
Journal of crystal growth 188 (1-4), 113-118, 1998
25 1998 Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy MJ Antonell, CR Abernathy, A Sher, M Berding, M Van Schilfgaarde, ...
Journal of crystal growth 188 (1-4), 113-118, 1998
25 1998 Thermodynamical properties of thallium-based III-V materials MA Berding, M Van Schilfgaarde, A Sher, MJ Antonell, CR Abernathy
Journal of Electronic Materials 26, 683-687, 1997
18 1997 Doping of InSb and InAs using CBr4 during growth by gas source molecular beam epitaxy W Schoenfeld, MJ Antonell, CR Abernathy
Journal of crystal growth 188 (1-4), 50-55, 1998
17 1998 X-ray system M Antonell, EC Houge, JM McIntosh, LE Plew, C Vartuli
US Patent 6,606,371, 2003
13 2003 Nonalloyed high temperature ohmic contacts on Te-doped InP F Ren, MJ Antonell, CR Abernathy, SJ Pearton, JR LaRoche, MW Cole, ...
Applied physics letters 74 (13), 1845-1847, 1999
11 1999 Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500–600 C MJ Antonell, KS Jones, TE Haynes
Journal of applied physics 79 (10), 7646-7651, 1996
11 1996 Synthesis and characterization of In–Tl–Sb compounds grown by molecular beam epitaxy MJ Antonell, CR Abernathy, WA Acree, MA Berding, A Sher
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (2 …, 1999
7 1999 Carbon doping of InSb using during growth by gas-source molecular beam epitaxy WV Schoenfeld, MJ Antonell, CR Abernathy
Applied physics letters 72 (10), 1235-1237, 1998
6 1998 Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy MJ Antonell, CR Abernathy, V Krishnamoorthy, RW Gedridge, TE Haynes
Journal of Electronic Materials 26, 1283-1286, 1997
5 1997 Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPIn DIPTe) MJ Antonell, CR Abernathy, RW Gedridge
Journal of crystal growth 164 (1-4), 420-424, 1996
5 1996 Method for detecting defects in a material and a system for accomplishing the same EC Houge, C Vartuli, M Antonell, P Cavanagh, H Ma
US Patent 6,870,950, 2005
4 2005 Method and apparatus for minimizing semiconductor wafer contamination M Antonell, EC Houge, LE Plew, C Vartuli, J Juszczak
US Patent 6,695,572, 2004
4 2004 Growth and characterization of GaTlAs MJ Antonell, B Gila, K Powers, CR Abernathy
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (5 …, 2000
3 2000