Ab initio mobility of single-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics Y Lee, S Fiore, M Luisier 2019 IEEE International Electron Devices Meeting (IEDM), 24.4. 1-24.4. 4, 2019 | 23 | 2019 |
Ab initio modeling of thermal transport through Van der Waals materials S Fiore, M Luisier Physical Review Materials, 2020 | 9 | 2020 |
Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors C Klinkert, S Fiore, J Backman, Y Lee, M Luisier IEEE Electron Device Letters 42 (3), 434-437, 2021 | 8 | 2021 |
Light-matter interactions in van der Waals photodiodes from first principles J Cao, S Fiore, C Klinkert, N Vetsch, M Luisier Physical Review B 106 (3), 035306, 2022 | 7 | 2022 |
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors S Fiore, C Klinkert, F Ducry, J Backman, M Luisier Materials 15 (3), 1062, 2022 | 6 | 2022 |
Transistors à effet de champ M LUISIER, C KLINKERT, S FIORE, J BACKMAN, Y LEE, C STIEGER, ... Au-delà du CMOS, 37, 2024 | | 2024 |
Field-Effect Transistors Based on 2D Materials: A Modeling Perspective M Luisier, C Klinkert, S Fiore, J Backman, Y Lee, C Stieger, Á Szabó Beyond-CMOS: State of the Art and Trends, 33, 2023 | | 2023 |
Bulk photovoltaic effect in partial overlap MoSe2-WSe2 van der Waals heterostructures: An ab initio quantum transport study J Cao, S Fiore, C Klinkert, M Luisier Solid-State Electronics 197, 108452, 2022 | | 2022 |
BOSONIC EFFECTS IN AB INITIO QUANTUM TRANSPORT SIMULATIONS OF VAN DER WAALS DEVICES. S Fiore ETH Zurich, 2022 | | 2022 |
Ab initio modelling of photodetectors based on van der Waals heterostructures J Cao, S Fiore, C Klinkert, M Luisier ETH Zurich, Integrated Systems Laboratory, 2022 | | 2022 |
Ab initio modeling of thermal effects in 2D van der Waals materials M Luisier, S Fiore, T Bunjaku, J Backman, C Klinkert, A Szabo The European Conference on Lasers and Electro-Optics, jsi_1_1, 2021 | | 2021 |