Fauzia Jabeen
Citata da
Citata da
Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
F Jabeen, V Grillo, S Rubini, F Martelli
Nanotechnology 19 (27), 275711, 2008
New mode of vapor− liquid− solid nanowire growth
VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner
Nano letters 11 (3), 1247-1253, 2011
Modulation doping of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility
JL Boland, S Conesa-Boj, P Parkinson, G Tütüncüoglu, F Matteini, ...
Nano letters 15 (2), 1336-1342, 2015
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires
M Piccin, G Bais, V Grillo, F Jabeen, S De Franceschi, E Carlino, ...
Physica E: Low-dimensional Systems and Nanostructures 37 (1-2), 134-137, 2007
Manganese-induced growth of GaAs nanowires
F Martelli, S Rubini, M Piccin, G Bais, F Jabeen, S De Franceschi, V Grillo, ...
Nano Letters 6 (9), 2130-2134, 2006
Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth
F Matteini, G Tütüncüoglu, H Potts, F Jabeen, A Fontcuberta i Morral
Crystal Growth & Design 15 (7), 3105-3109, 2015
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy
F Martelli, M Piccin, G Bais, F Jabeen, S Ambrosini, S Rubini, A Franciosi
Nanotechnology 18 (12), 125603, 2007
Increased photoconductivity lifetime in GaAs nanowires by controlled n-type and p-type doping
JL Boland, A Casadei, G Tütüncüoglu, F Matteini, CL Davies, ...
ACS nano 10 (4), 4219-4227, 2016
Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy
N Begum, M Piccin, F Jabeen, G Bais, S Rubini, F Martelli, AS Bhatti
Journal of Applied Physics 104 (10), 104311, 2008
Room temperature luminescent InGaAs/GaAs core-shell nanowires
F Jabeen, S Rubini, V Grillo, L Felisari, F Martelli
Applied Physics Letters 93 (8), 083117, 2008
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain
G Bisognin, D De Salvador, AV Drigo, E Napolitani, A Sambo, M Berti, ...
Applied physics letters 89 (6), 061904, 2006
Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy
C Sartel, DL Dheeraj, F Jabeen, JC Harmand
Journal of crystal growth 312 (14), 2073-2077, 2010
Growth of III–V semiconductor nanowires by molecular beam epitaxy
F Jabeen, S Rubini, F Martelli
Microelectronics Journal 40 (3), 442-445, 2009
Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study
W Peng, F Jabeen, B Jusserand, JC Harmand, M Bernard
Applied Physics Letters 100 (7), 073102, 2012
Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires
N Begum, AS Bhatti, F Jabeen, S Rubini, F Martelli
Journal of applied physics 106 (11), 114317, 2009
GaP/GaAs1− xPx nanowires fabricated with modulated fluxes: a step towards the realization of superlattices in a single nanowire
F Jabeen, G Patriarche, F Glas, JC Harmand
Journal of crystal growth 323 (1), 293-296, 2011
Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires
D Lucot, F Jabeen, JC Harmand, G Patriarche, R Giraud, G Faini, D Mailly
Applied Physics Letters 98 (14), 142114, 2011
Periodic squeezing in a polariton Josephson junction
AF Adiyatullin, MD Anderson, H Flayac, MT Portella-Oberli, F Jabeen, ...
Nature communications 8 (1), 1-6, 2017
Advances in III-V semiconductor nanowires and nanodevices
J Li, D Wang, RR LaPierre
Bentham Science Publishers, 2011
Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires
F Jabeen, S Rubini, F Martelli, A Franciosi, A Kolmakov, L Gregoratti, ...
Nano Research 3 (10), 706-713, 2010
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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