Dmytro Apalkov
Dmytro Apalkov
Principal Engineer/Director, Modeling, Samsung Semiconductor R&D
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Cited by
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Basic principles of STT-MRAM cell operation in memory arrays
AV Khvalkovskiy, D Apalkov, S Watts, R Chepulskii, RS Beach, A Ong, ...
Journal of Physics D: Applied Physics 46 (7), 074001, 2013
Advances and future prospects of spin-transfer torque random access memory
E Chen, D Apalkov, Z Diao, A Driskill-Smith, D Druist, D Lottis, V Nikitin, ...
IEEE Transactions on Magnetics 46 (6), 1873-1878, 2010
Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion
AV Khvalkovskiy, V Cros, D Apalkov, V Nikitin, M Krounbi, KA Zvezdin, ...
Physical Review B 87 (2), 020402, 2013
Spin-transfer torque magnetic random access memory (STT-MRAM)
D Apalkov, A Khvalkovskiy, S Watts, V Nikitin, X Tang, D Lottis, K Moon, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (2), 1-35, 2013
Magnetoresistive random access memory
D Apalkov, B Dieny, JM Slaughter
Proceedings of the IEEE 104 (10), 1796-1830, 2016
Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and barriers
Z Diao, D Apalkov, M Pakala, Y Ding, A Panchula, Y Huai
Applied Physics Letters 87 (23), 232502, 2005
Spin transfer switching in dual MgO magnetic tunnel junctions
Z Diao, A Panchula, Y Ding, M Pakala, S Wang, Z Li, D Apalkov, H Nagai, ...
Applied Physics Letters 90 (13), 132508, 2007
Spin-torque switching: Fokker-Planck rate calculation
DM Apalkov, PB Visscher
Physical Review B 72 (18), 180405, 2005
Perpendicular spin torques in magnetic tunnel junctions
Z Li, S Zhang, Z Diao, Y Ding, X Tang, DM Apalkov, Z Yang, K Kawabata, ...
Physical Review Letters 100 (24), 246602, 2008
Method and system for providing a spin transfer device with improved switching characteristics
D Apalkov, Z Li
US Patent 7,486,552, 2009
Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
E Chen, D Apalkov
US Patent 7,800,942, 2010
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
R Chepulskyy, X Tang, D Apalkov, AV Khvalkovskiy, V Nikitin, MT Krounbi
US Patent 9,130,155, 2015
Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements
D Apalkov, Y Huai
US Patent App. 11/185,507, 2007
Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction
AV Khvalkovskiy, D Apalkov
US Patent 9,076,537, 2015
Latest advances and roadmap for in-plane and perpendicular STT-RAM
A Driskill-Smith, D Apalkov, V Nikitin, X Tang, S Watts, D Lottis, K Moon, ...
2011 3rd IEEE International Memory Workshop (IMW), 1-3, 2011
Magnetic elements having a bias field and magnetic memory devices using the magnetic elements
Y Huai, D Apalkov
US Patent 7,518,835, 2009
Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
D Apalkov, Z Diao, Y Ding, Y Huai
US Patent App. 11/251,428, 2007
Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation
D Apalkov, S Watts, A Driskill-Smith, E Chen, Z Diao, V Nikitin
IEEE transactions on magnetics 46 (6), 2240-2243, 2010
Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
AV Khvalkovskiy, D Apalkov, MT Krounbi
US Patent 9,105,830, 2015
Spin-transfer switching in MgO-based magnetic tunnel junctions
Z Diao, M Pakala, A Panchula, Y Ding, D Apalkov, LC Wang, E Chen, ...
Journal of applied physics 99 (8), 08G510, 2006
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