Lutz Kirste
Lutz Kirste
Dr. rer. nat., Fraunhofer IAF
Verified email at
Cited by
Cited by
Size-dependent reactivity of diamond nanoparticles
OA Williams, J Hees, C Dieker, W Jäger, L Kirste, CE Nebel
ACS nano 4 (8), 4824-4830, 2010
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1− xScxN (up to x= 0.41) thin films
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, M Prescher, L Kirste, ...
Apl Materials 6 (7), 2018
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
N Kurz, A Ding, DF Urban, Y Lu, L Kirste, NM Feil, A Žukauskaitė, ...
Journal of Applied Physics 126 (7), 2019
Metal‐organic chemical vapor deposition of aluminum scandium nitride
S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ...
physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ...
CrystEngComm 18 (19), 3488-3497, 2016
Densification of thin aluminum oxide films by thermal treatments
V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ...
Materials Sciences and Applications 5 (08), 628, 2014
Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, L Kirste, V Lebedev, ...
physica status solidi (a) 215 (9), 1700559, 2018
Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41
M Baeumler, Y Lu, N Kurz, L Kirste, M Prescher, T Christoph, J Wagner, ...
Journal of Applied Physics 126 (4), 2019
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ...
IEEE Electron Device Letters 31 (7), 671-673, 2010
Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties
O Ambacher, B Christian, N Feil, DF Urban, C Elsässer, M Prescher, ...
Journal of Applied Physics 130 (4), 2021
Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1− xN
K Köhler, R Gutt, J Wiegert, L Kirste
Journal of Applied Physics 113 (7), 2013
Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
J Däubler, T Passow, R Aidam, K Köhler, L Kirste, M Kunzer, J Wagner
Applied Physics Letters 105 (11), 2014
Chemically ordered alloys: Spontaneous formation of natural quantum wells
M Albrecht, L Lymperakis, J Neugebauer, JE Northrup, L Kirste, M Leroux, ...
Physical Review B—Condensed Matter and Materials Physics 71 (3), 035314, 2005
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ...
Journal of Applied Physics 106 (2), 2009
X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method
N Herres, L Kirste, H Obloh, K Köhler, J Wagner, P Koidl
Materials Science and Engineering: B 91, 425-432, 2002
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
K Frei, R Trejo-Hernández, S Schütt, L Kirste, M Prescher, R Aidam, ...
Japanese Journal of Applied Physics 58 (SC), SC1045, 2019
Influence of the surface potential on electrical properties of AlxGa1− xN/GaN heterostructures with different Al-content: Effect of growth method
K Köhler, S Müller, R Aidam, P Waltereit, W Pletschen, L Kirste, ...
Journal of Applied Physics 107 (5), 2010
Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
J Bläsing, A Krost, J Hertkorn, F Scholz, L Kirste, A Chuvilin, U Kaiser
Journal of Applied Physics 105 (3), 2009
Near infrared absorption and room temperature photovoltaic response in AlN∕ GaN superlattices grown by metal-organic vapor-phase epitaxy
E Baumann, FR Giorgetta, D Hofstetter, S Golka, W Schrenk, G Strasser, ...
Applied physics letters 89 (4), 2006
Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering
RE Sah, L Kirste, M Baeumler, P Hiesinger, V Cimalla, V Lebedev, ...
Journal of Vacuum Science & Technology A 28 (3), 394-399, 2010
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