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Lutz Kirste
Lutz Kirste
Dr. rer. nat., Fraunhofer IAF
Verified email at iaf.fraunhofer.de
Title
Cited by
Cited by
Year
Size-dependent reactivity of diamond nanoparticles
OA Williams, J Hees, C Dieker, W Jäger, L Kirste, CE Nebel
ACS nano 4 (8), 4824-4830, 2010
4372010
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1− xScxN (up to x= 0.41) thin films
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, M Prescher, L Kirste, ...
Apl Materials 6 (7), 2018
1022018
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
N Kurz, A Ding, DF Urban, Y Lu, L Kirste, NM Feil, A Žukauskaitė, ...
Journal of Applied Physics 126 (7), 2019
882019
Metal‐organic chemical vapor deposition of aluminum scandium nitride
S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ...
physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020
852020
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ...
CrystEngComm 18 (19), 3488-3497, 2016
812016
Densification of thin aluminum oxide films by thermal treatments
V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ...
Materials Sciences and Applications 5 (08), 628, 2014
812014
Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, L Kirste, V Lebedev, ...
physica status solidi (a) 215 (9), 1700559, 2018
772018
Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41
M Baeumler, Y Lu, N Kurz, L Kirste, M Prescher, T Christoph, J Wagner, ...
Journal of Applied Physics 126 (4), 2019
722019
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ...
IEEE Electron Device Letters 31 (7), 671-673, 2010
702010
Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties
O Ambacher, B Christian, N Feil, DF Urban, C Elsässer, M Prescher, ...
Journal of Applied Physics 130 (4), 2021
692021
Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1− xN
K Köhler, R Gutt, J Wiegert, L Kirste
Journal of Applied Physics 113 (7), 2013
652013
Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
J Däubler, T Passow, R Aidam, K Köhler, L Kirste, M Kunzer, J Wagner
Applied Physics Letters 105 (11), 2014
642014
Chemically ordered alloys: Spontaneous formation of natural quantum wells
M Albrecht, L Lymperakis, J Neugebauer, JE Northrup, L Kirste, M Leroux, ...
Physical Review B—Condensed Matter and Materials Physics 71 (3), 035314, 2005
642005
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ...
Journal of Applied Physics 106 (2), 2009
622009
X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method
N Herres, L Kirste, H Obloh, K Köhler, J Wagner, P Koidl
Materials Science and Engineering: B 91, 425-432, 2002
582002
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
K Frei, R Trejo-Hernández, S Schütt, L Kirste, M Prescher, R Aidam, ...
Japanese Journal of Applied Physics 58 (SC), SC1045, 2019
552019
Influence of the surface potential on electrical properties of AlxGa1− xN/GaN heterostructures with different Al-content: Effect of growth method
K Köhler, S Müller, R Aidam, P Waltereit, W Pletschen, L Kirste, ...
Journal of Applied Physics 107 (5), 2010
522010
Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
J Bläsing, A Krost, J Hertkorn, F Scholz, L Kirste, A Chuvilin, U Kaiser
Journal of Applied Physics 105 (3), 2009
522009
Near infrared absorption and room temperature photovoltaic response in AlN∕ GaN superlattices grown by metal-organic vapor-phase epitaxy
E Baumann, FR Giorgetta, D Hofstetter, S Golka, W Schrenk, G Strasser, ...
Applied physics letters 89 (4), 2006
522006
Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering
RE Sah, L Kirste, M Baeumler, P Hiesinger, V Cimalla, V Lebedev, ...
Journal of Vacuum Science & Technology A 28 (3), 394-399, 2010
512010
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