| BSIM6: Analog and RF compact model for bulk MOSFET YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ... IEEE Transactions on Electron Devices 61 (2), 234-244, 2013 | 132 | 2013 |
| Engineering negative differential resistance in NCFETs for analog applications H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, MY Kao, ... IEEE Transactions on Electron Devices 65 (5), 2033-2039, 2018 | 98 | 2018 |
| BSIM-CMG: Standard FinFET compact model for advanced circuit design JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ... ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015 | 93 | 2015 |
| Proposal for capacitance matching in negative capacitance field-effect transistors H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ... IEEE Electron Device Letters 40 (3), 463-466, 2019 | 78 | 2019 |
| BSIM compact model of quantum confinement in advanced nanosheet FETs A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ... IEEE Transactions on Electron Devices 67 (2), 730-737, 2020 | 47 | 2020 |
| Analysis and modeling of inner fringing field effect on negative capacitance FinFETs YK Lin, H Agarwal, P Kushwaha, MY Kao, YH Liao, K Chatterjee, ... IEEE Transactions on Electron Devices 66 (4), 2023-2027, 2019 | 45 | 2019 |
| NCFET design considering maximum interface electric field H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, JP Duarte, ... IEEE Electron Device Letters 39 (8), 1254-1257, 2018 | 41 | 2018 |
| Spacer engineering in negative capacitance FinFETs YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ... IEEE Electron Device Letters 40 (6), 1009-1012, 2019 | 39 | 2019 |
| Variation caused by spatial distribution of dielectric and ferroelectric grains in a negative capacitance field-effect transistor MY Kao, AB Sachid, YK Lin, YH Liao, H Agarwal, P Kushwaha, JP Duarte, ... IEEE Transactions on Electron Devices 65 (10), 4652-4658, 2018 | 38 | 2018 |
| BSIM compact MOSFET models for SPICE simulation YS Chauhan, S Venugopalan, N Paydavosi, P Kushwaha, S Jandhyala, ... Proceedings of the 20th International Conference Mixed Design of Integrated …, 2013 | 37 | 2013 |
| Design Optimization Techniques in Nanosheet Transistor for RF Applications P Kushwaha, A Dasgupta, MY Kao, H Agarwal, S Salahuddin, C Hu IEEE Transactions on Electron Devices 67 (10), 4515-4520, 2020 | 34 | 2020 |
| Characterization and modeling of flicker noise in FinFETs at advanced technology node P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ... IEEE Electron Device Letters 40 (6), 985-988, 2019 | 34 | 2019 |
| Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved Sensitivity in Presence of Parasitic Capacitance H Agarwal, P Kushwaha, JP Duarte, YK Lin, AB Sachid, HL Chang, ... IEEE Transactions on Electron Devices 65 (3), 1211-1216, 2018 | 33 | 2018 |
| Modeling the impact of substrate depletion in FDSOI MOSFETs P Kushwaha, N Paydavosi, S Khandelwal, C Yadav, H Agarwal, ... Solid-State Electronics 104, 6-11, 2015 | 32 | 2015 |
| Recent enhancements in BSIM6 bulk MOSFET model H Agarwal, S Venugopalan, MA Chalkiadaki, N Paydavosi, JP Duarte, ... 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 30 | 2013 |
| Compact model for geometry dependent mobility in nanosheet FETs A Dasgupta, SS Parihar, H Agarwal, P Kushwaha, YS Chauhan, C Hu IEEE Electron Device Letters 41 (3), 313-316, 2020 | 25 | 2020 |
| BSIM-HV: High-voltage MOSFET model including quasi-saturation and self-heating effect H Agarwal, C Gupta, R Goel, P Kushwaha, YK Lin, MY Kao, JP Duarte, ... IEEE Transactions on Electron Devices 66 (10), 4258-4263, 2019 | 25 | 2019 |
| Unified compact model covering drift-diffusion to ballistic carrier transport S Khandelwal, H Agarwal, P Kushwaha, JP Duarte, A Medury, ... IEEE Electron Device Letters 37 (2), 134-137, 2015 | 24 | 2015 |
| Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model H Agarwal, C Gupta, P Kushwaha, C Yadav, JP Duarte, S Khandelwal, ... IEEE journal of the Electron Devices Society 3 (3), 240-243, 2015 | 24 | 2015 |
| Optimization of NCFET by matching dielectric and ferroelectric nonuniformly along the channel MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ... IEEE Electron Device Letters 40 (5), 822-825, 2019 | 22 | 2019 |
chenming huUniversity of California, BerkeleyVerified email at eecs.berkeley.edu
