Comparison of nonlinear optical properties of sulfide glasses in bulk and thin film form KA Cerqua-Richardson, JM McKinley, B Lawrence, S Joshi, A Villeneuve
Optical Materials 10 (2), 155-159, 1998
121 1998 Diffusion of 18 elements implanted into thermally grown HG Francois-Saint-Cyr, FA Stevie, JM McKinley, K Elshot, L Chow, ...
Journal of applied physics 94 (12), 7433-7439, 2003
50 2003 Dopant dose loss at the interface HH Vuong, CS Rafferty, SA Eshraghi, J Ning, JR McMacken, S Chaudhry, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
49 2000 Secondary Ion Mass Spectrometry, SIMS VII FA Stevie, DS Simons, JM McKinley, J McMacken, R Santiesteban, ...
Lareau et al., eds., Chichester 983, 1998
32 1998 Boron pileup and clustering in silicon-on-insulator films HH Vuong, HJ Gossmann, L Pelaz, GK Celler, DC Jacobson, D Barr, ...
Applied physics letters 75 (8), 1083-1085, 1999
23 1999 Secondary Ion Mass Spectrometry, SIMS XI, edited by G. Gillen, R. Lareau, J. Bennett, and F. Stevie FA Stevie, DS Simons, JM McKinley, J McMacken, R Santiesteban, ...
Wiley, Chichester, 1998
22 1998 Analysis of alkali elements in insulators using a CAMECA IMS-6f JM McKinley, FA Stevie, CN Granger, D Renard
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (1 …, 2000
19 2000 Nitrogen incorporation and trace element analysis of nanocrystalline diamond thin films by secondary ion mass spectrometry D Zhou, FA Stevie, L Chow, J McKinley, H Gnaser, VH Desai
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17, 1135, 1999
16 1999 Surface quantification by ion implantation through a removable layer FA Stevie, RF Roberts, JM McKinley, MA Decker, CN Granger, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
13 2000 High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry PH Chi, DS Simons, JM McKinley, FA Stevie, CN Granger
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002
11 2002 Transient-enhanced diffusion in shallow-junction formation AT Fiory, SG Chawda, S Madishetty, VR Mehta, NM Ravindra, SP McCoy, ...
Journal of electronic materials 31, 999-1003, 2002
8 2002 Depth profiling of ultra-shallow implants using a Cameca IMS-6f JM McKinley, FA Stevie, T Neil, JJ Lee, L Wu, D Sieloff, C Granger
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
8 2000 Rapid thermal activation and diffusion of boron and phosphorus implants AT Fiory, SG Chawda, S Madishetty, VR Mehta, NM Ravindra, SP McCoy, ...
9th International Conference on Advanced Thermal Processing of …, 2001
7 2001 Boron and phosphorous dopant diffusion in crystalline Si by rapid thermal activation AT Fiory, SG Chawda, S Madishetty, NM Ravindra, A Agarwal, ...
Proceedings of the 11th Workshop on Crystalline Silicon Solar Cell Materials …, 2001
5 2001 Chalcogenide glass thin-film optics for infrared applications J Nath, D Panjwani, RE Peale, JD Musgraves, P Wachtel, JM McKinley
Sensors and Systems for Space Applications VII 9085, 908507, 2014
4 2014 FIB preparation of Mesa structures for SIMS analysis JM McKinley, BB Rossie, MA Decker, FA Stevie
Microscopy and Microanalysis 8 (S02), 542-543, 2002
3 2002 In-fab techniques for baselining implant dose, contamination.(Metrology). RS Santiesteban, JM McKinley, FA Stevie, P Flatch III, O Rodriguez
Solid State Technology 45 (8), 63-67, 2002
3 2002 Calibration Method for Elemental Quantification CB Vartuli, FA Stevie, LA Giannuzzi, TL Shofner, BM Purcell, RB Irwin, ...
Microscopy and Microanalysis 6 (S2), 536-537, 2000
3 2000 Energy Dispersive Spectrometry Calibration of Fe and Co CB Vartuli, FA Stevie, BM Purcell, A Scwhitter, B Rossie, S Brown, ...
Microscopy and Microanalysis 7 (S2), 200-201, 2001
2 2001 Dose calibration of ion implanters for semiconductor production FA Stevie, DS Simons, JM McKinley, J McMacken, R Santiesteban, ...
F A. Stevie, David S. Simons, J M. McKinley, J McMacken, R Santiesteban, P …, 1998
2 1998