Electrochemical metallization memories—fundamentals, applications, prospects I Valov, R Waser, JR Jameson, MN Kozicki
Nanotechnology 22 (25), 254003, 2011
1202 2011 Nanoscale memory elements based on solid-state electrolytes MN Kozicki, M Park, M Mitkova
IEEE Transactions on Nanotechnology 4 (3), 331-338, 2005
667 2005 Programmable metallization cell structure and method of making same MN Kozicki, WC West
US Patent 5,761,115, 1998
609 1998 Bipolar and Unipolar Resistive Switching in Cu-Doped C Schindler, SCP Thermadam, R Waser, MN Kozicki
IEEE Transactions on Electron Devices 54 (10), 2762-2768, 2007
489 2007 Programmable microelectronic devices and method of forming and programming same MN Kozicki
US Patent 6,487,106, 2002
407 2002 Silver incorporation in Ge–Se glasses used in programmable metallization cell devices M Mitkova, MN Kozicki
Journal of non-crystalline solids 299, 1023-1027, 2002
393 2002 Study of multilevel programming in programmable metallization cell (PMC) memory U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki
IEEE transactions on electron devices 56 (5), 1040-1047, 2009
377 2009 Microelectronic programmable device and methods of forming and programming the same MN Kozicki, M Mitkova
US Patent 6,635,914, 2003
355 2003 Personal electronic dosimeter MN Kozicki
US Patent 5,500,532, 1996
331 1996 Programmable sub-surface aggregating metallization structure and method of making same MN Kozicki, WC West
US Patent 6,418,049, 2002
324 2002 Programmable metallization cell structure and method of making same MN Kozicki, WC West
US Patent 5,896,312, 1999
317 1999 Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same MN Kozicki
US Patent 6,825,489, 2004
315 2004 Programmable microelectronic device, structure, and system and method of forming the same MN Kozicki
US Patent 6,985,378, 2006
304 2006 High resolution, multi-layer resist for microlithography and method therefor MN Kozicki, SW Hsia
US Patent 5,314,772, 1994
286 1994 A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte MN Kozicki, C Gopalan, M Balakrishnan, M Mitkova
IEEE Transactions on Nanotechnology 5 (5), 535-544, 2006
285 2006 Programmable structure, an array including the structure, and methods of forming the same MN Kozicki
US Patent 6,927,411, 2005
257 2005 Self-repairing interconnections for electrical circuits MN Kozicki
US Patent 6,388,324, 2002
255 2002 Programmable sub-surface aggregating metallization structure and method of making same MN Kozicki, WC West
US Patent 6,798,692, 2004
254 2004 Programmable interconnection system for electrical circuits MN Kozicki
US Patent 6,469,364, 2002
244 2002 Low current resistive switching in Cu–SiO2 cells C Schindler, M Weides, MN Kozicki, R Waser
Applied Physics Letters 92 (12), 2008
237 2008