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Richard Jackman
Richard Jackman
Adresse e-mail validée de ucl.ac.uk
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Growth, electronic properties and applications of nanodiamond
OA Williams, M Nesladek, M Daenen, S Michaelson, A Hoffman, E Osawa, ...
Diamond and Related Materials 17 (7-10), 1080-1088, 2008
3492008
An X-ray photoelectron spectroscopic investigation of the oxidation of manganese
JS Foord, RB Jackman, GC Allen
Philosophical Magazine A 49 (5), 657-663, 1984
2041984
-type conductivity in ultrananocrystalline diamond films
OA Williams, S Curat, JE Gerbi, DM Gruen, RB Jackman
Applied Physics Letters 85 (10), 1680-1682, 2004
1652004
Ordered growth of neurons on diamond
CG Specht, OA Williams, RB Jackman, R Schoepfer
Biomaterials 25 (18), 4073-4078, 2004
1602004
The use of nanodiamond monolayer coatings to promote the formation of functional neuronal networks
A Thalhammer, RJ Edgington, LA Cingolani, R Schoepfer, RB Jackman
Biomaterials 31 (8), 2097-2104, 2010
1422010
Reaction mechanisms for the photon-enhanced etching of semiconductors: an investigation of the UV-stimulated interaction of chlorine with Si (100)
RB Jackman, H Ebert, JS Foord
Surface science 176 (1-2), 183-192, 1986
1371986
High carrier mobility in polycrystalline thin film diamond
HJ Looi, RB Jackman, JS Foord
Applied physics letters 72 (3), 353-355, 1998
1331998
pH sensors based on hydrogenated diamond surfaces
RBJ Jose A. Garrido, Andreas Härtl, Stefan Kuch
Applied Physics Letters 86, 073504, 2005
129*2005
Polycrystalline diamond photoconductive device with high UV‐visible discrimination
RD McKeag, SSM Chan, RB Jackman
Applied physics letters 67 (15), 2117-2119, 1995
1291995
Diamond UV photodetectors: sensitivity and speed for visible blind applications
RD McKeag, RB Jackman
Diamond and related materials 7 (2-5), 513-518, 1998
1001998
Hydrogen-induced transport properties of holes in diamond surface layers
CE Nebel, C Sauerer, F Ertl, M Stutzmann, CFO Graeff, P Bergonzo, ...
Applied physics letters 79 (27), 4541-4543, 2001
992001
Hydrogen-induced transport properties of holes in diamond surface layers
RJ C. E. Nebel, C. Sauerer, F. Ertl, M. Stutzmann, C
Applied Physics Letters 79, 4541-4543, 2001
992001
Hydrogen-induced transport properties of holes in diamond surface layers
CE Nebel, CE (Nebel, C Sauerer, C (Sauerer, F Ertl, F (Ertl, ...
Applied Physics Letters 79, 4541-4543, 2001
992001
Hydrogen-induced transport properties of holes in diamond surface layers
CE Nebel, CE (Nebel, C Sauerer, C (Sauerer, F Ertl, F (Ertl, ...
Applied Physics Letters 79, 4541-4543, 2001
992001
Hydrogen-induced transport properties of holes in diamond surface layers
RJ C. E. Nebel, C. Sauerer, F. Ertl, M. Stutzmann, C
Appl. Phys. Lett 79, 4541, 0
99*
Chemical vapour deposition on silicon: In situ surface studies
JS Foord, RB Jackman
Chemical physics letters 112 (2), 190-194, 1984
951984
Photochemical processing of electronic materials
IW Boyd, RB Jackman
Academic Press, 1992
841992
An insight into the mechanism of surface conductivity in thin film diamond
HJ Looi, LYS Pang, AB Molloy, F Jones, JS Foord, RB Jackman
Diamond and Related Materials 7 (2-5), 550-555, 1998
831998
Spectroscopic impedance study of nanocrystalline diamond films
H Ye, RB Jackman, P Hing
Journal of applied physics 94 (12), 7878-7882, 2003
752003
Surface conductivity on hydrogen terminated diamond
OA Williams, RB Jackman
Semiconductor science and technology 18 (3), S34, 2003
722003
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