Nanomagnet logic: progress toward system-level integration MT Niemier, GH Bernstein, G Csaba, A Dingler, XS Hu, S Kurtz, S Liu, ... Journal of Physics: Condensed Matter 23 (49), 493202, 2011 | 239 | 2011 |
A 4-Mb 0.18-/spl mu/m 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers TW Andre, JJ Nahas, CK Subramanian, BJ Garni, HS Lin, A Omair, ... IEEE journal of solid-state circuits 40 (1), 301-309, 2005 | 207 | 2005 |
Sense amplifier bias circuit for a memory having at least two distinct resistance states JJ Nahas, TW Andre, BJ Garni US Patent 6,700,814, 2004 | 204 | 2004 |
Two-dimensional heterojunction interlayer tunneling field effect transistors (thin-TFETs) MO Li, D Esseni, JJ Nahas, D Jena, HG Xing IEEE Journal of the Electron Devices Society 3 (3), 200-207, 2015 | 161 | 2015 |
A 0.18/spl mu/m 4 Mbit toggling MRAM M Durlam, D Addie, J Akerman, B Butcher, P Brown, J Chan, M DeHerrera, ... 2004 International Conference on Integrated Circuit Design and Technology …, 2004 | 152 | 2004 |
Analog circuit design using tunnel-FETs B Sedighi, XS Hu, H Liu, JJ Nahas, M Niemier IEEE transactions on circuits and systems I: regular papers 62 (1), 39-48, 2014 | 137 | 2014 |
Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics CK Subramanian, JJ Nahas US Patent 6,944,052, 2005 | 104 | 2005 |
Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits X Yin, A Aziz, J Nahas, S Datta, S Gupta, M Niemier, XS Hu 2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 1-8, 2016 | 88 | 2016 |
Demonstrated reliability of 4-Mb MRAM J Akerman, P Brown, M DeHerrera, M Durlam, E Fuchs, D Gajewski, ... IEEE Transactions on Device and Materials Reliability 4 (3), 428-435, 2004 | 82 | 2004 |
Migrating tasks between asymmetric computing elements of a multi-core processor A Naveh, Y Yosef, E Weissmann, A Aggarwal, E Rotem, A Mendelson, ... US Patent 10,185,566, 2019 | 76* | 2019 |
MRAM and methods for reading the MRAM MA Durlam, TW Andre, MF Deherrera, BN Engel, BJ Garni, JJ Nahas, ... US Patent 6,909,631, 2005 | 61 | 2005 |
Modeling and computer simulation of a microwave-to-dc energy conversion element JJ Nahas IEEE Transactions on Microwave Theory and Techniques 23 (12), 1030-1035, 1975 | 59 | 1975 |
Sense amplifier for a memory having at least two distinct resistance states JJ Nahas, TW Andre, BJ Garni, CK Subramanian US Patent 6,600,690, 2003 | 50 | 2003 |
Magnetic–electrical interface for nanomagnet logic S Liu, XS Hu, JJ Nahas, MT Niemier, W Porod, GH Bernstein IEEE transactions on nanotechnology 10 (4), 757-763, 2010 | 44 | 2010 |
MRAM having error correction code circuitry and method therefor JJ Nahas US Patent 7,370,260, 2008 | 38 | 2008 |
A 4Mb 0.18/spl mu/m 1T1MTJ Toggle MRAM memory J Nahas, T Andre, C Subramanian, B Garni, H Lin, A Omair, W Martino 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No …, 2004 | 36 | 2004 |
TFET-based cellular neural network architectures I Palit, XS Hu, J Nahas, M Niemier International Symposium on Low Power Electronics and Design (ISLPED), 236-241, 2013 | 32 | 2013 |
Memory having a precharge circuit and method therefor CK Subramanian, TW Andre, JJ Nahas US Patent 6,711,052, 2004 | 29 | 2004 |
A 180 Kbit embeddable MRAM memory module JJ Nahas, TW Andre, B Garni, C Subramanian, H Lin, SM Alam, ... IEEE Journal of solid-state circuits 43 (8), 1826-1834, 2008 | 27 | 2008 |
Nontraditional computation using beyond-CMOS tunneling devices B Sedighi, XS Hu, JJ Nahas, M Niemier IEEE Journal on Emerging and Selected Topics in Circuits and Systems 4 (4 …, 2014 | 26 | 2014 |