Ishwara Bhat
Ishwara Bhat
Professor, Electrical Computer Systems Engineering
Verified email at rpi.edu
Title
Cited by
Cited by
Year
Electrical characteristics of magnesium-doped gallium nitride junction diodes
JB Fedison, TP Chow, H Lu, IB Bhat
Applied physics letters 72 (22), 2841-2843, 1998
1211998
Material for selective deposition and etching
I Bhat, J Seiler, C Li
US Patent App. 11/215,185, 2006
1042006
Electro-chemical mechanical polishing of silicon carbide
C Li, IB Bhat, R Wang, J Seiler
Journal of electronic materials 33 (5), 481-486, 2004
1022004
Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy
JW Huang, TF Kuech, H Lu, I Bhat
Applied physics letters 68 (17), 2392-2394, 1996
981996
The organometallic epitaxy of extrinsic p‐doped HgCdTe
NR Taskar, IB Bhat, KK Parat, D Terry, H Ehsani, SK Ghandhi
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989
741989
Photoassisted anodic etching of gallium nitride
H Lu, Z Wu, I Bhat
Journal of the Electrochemical Society 144 (1), L8, 1997
631997
Antimonide-based devices for thermophotovoltaic applications
CW Hitchcock, RJ Gutmann, JM Borrego, IB Bhat, GW Charache
IEEE Transactions on Electron Devices 46 (10), 2154-2161, 1999
611999
Arsenic‐doped p‐CdTe layers grown by organometallic vapor phase epitaxy
SK Ghandhi, NR Taskar, IB Bhat
Applied physics letters 50 (14), 900-902, 1987
581987
Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition
DJ Olego, J Petruzzello, SK Ghandhi, NR Taskar, IB Bhat
Applied physics letters 51 (2), 127-129, 1987
561987
On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy
IB Bhat, NR Taskar, SK Ghandhi
Journal of the Electrochemical Society 134 (1), 195, 1987
541987
Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry
B Johs, D Doerr, S Pittal, IB Bhat, S Dakshinamurthy
Thin Solid Films 233 (1-2), 293-296, 1993
521993
6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process
S Balachandran, C Li, PA Losee, IB Bhat, TP Chow
Proceedings of the 19th International Symposium on Power Semiconductor …, 2007
512007
Epitaxial growth of AlN and layers on aluminum nitride substrates
LJ Schowalter, Y Shusterman, R Wang, I Bhat, G Arunmozhi, GA Slack
Applied Physics Letters 76 (8), 985-987, 2000
512000
Ternary and quaternary antimonide devices for thermophotovoltaic applications
CW Hitchcock, RJ Gutmann, H Ehsani, IB Bhat, CA Wang, MJ Freeman, ...
Journal of crystal growth 195 (1-4), 363-372, 1998
511998
High quality Hg1−xCdxTe epitaxial layers by the organometallic process
SK Ghandhi, I Bhat
Applied physics letters 44 (8), 779-781, 1984
501984
Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency
R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat
Applied Physics Letters 100 (24), 243507, 2012
442012
Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors
R Wang, IB Bhat, TP Chow
Journal of applied physics 92 (12), 7587-7592, 2002
442002
Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity
SK Ghandhi, IB Bhat, H Fardi
Applied physics letters 52 (5), 392-394, 1988
441988
High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination
PA Losee, SK Balachandran, L Zhu, C Li, J Seiler
ISPSD'04 (proceedings of the 16th International Symposium on Power …, 2004
432004
Small angle grain boundary Ge films on biaxial CaF2/glass substrate
C Gaire, PC Clemmer, HF Li, TC Parker, P Snow, I Bhat, S Lee, GC Wang, ...
Journal of Crystal Growth 312 (4), 607-610, 2010
422010
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Articles 1–20