| Current status of AlInN layers lattice-matched to GaN for photonics and electronics R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ... Journal of Physics D: Applied Physics 40 (20), 6328, 2007 | 404 | 2007 |
| Room-temperature polariton luminescence from a bulk GaN microcavity R Butté, G Christmann, E Feltin, JF Carlin, M Mosca, M Ilegems, ... Physical Review B 73 (3), 033315, 2006 | 128 | 2006 |
| Midinfrared intersubband absorption in lattice-matched AlInN∕ GaN multiple quantum wells S Nicolay, JF Carlin, E Feltin, R Butté, M Mosca, N Grandjean, M Ilegems, ... Applied Physics Letters 87 (11), 2005 | 106 | 2005 |
| Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum: Measurements by the four-probe method and by Kelvin force … J Olivier, B Servet, M Vergnolle, M Mosca, G Garry Synthetic Metals 122 (1), 87-89, 2001 | 106 | 2001 |
| Indium surfactant effect on AlN∕ GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions S Nicolay, E Feltin, JF Carlin, M Mosca, L Nevou, M Tchernycheva, ... Applied physics letters 88 (15), 2006 | 74 | 2006 |
| Blue lasing at room temperature in high quality factor GaN∕ AlInN microdisks with InGaN quantum wells D Simeonov, E Feltin, HJ Bühlmann, T Zhu, A Castiglia, M Mosca, ... Applied physics letters 90 (6), 2007 | 68 | 2007 |
| Room temperature polariton luminescence from a GaN∕ AlGaN quantum well microcavity E Feltin, G Christmann, R Butté, JF Carlin, M Mosca, N Grandjean Applied physics letters 89 (7), 2006 | 50 | 2006 |
| Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO 2 thin films on sapphire T Cesca, C Scian, E Petronijevic, G Leahu, RL Voti, G Cesarini, ... Nanoscale 12 (2), 851-863, 2020 | 48 | 2020 |
| Resistive switching in microscale anodic titanium dioxide-based memristors V Aglieri, A Zaffora, G Lullo, M Santamaria, F Di Franco, UL Cicero, ... Superlattices and Microstructures 113, 135-142, 2018 | 47 | 2018 |
| Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition R Macaluso, M Mosca, V Costanza, A D'angelo, G Lullo, F Caruso, C Calì, ... Electronics letters 50 (4), 262-263, 2014 | 40 | 2014 |
| InAlN underlayer for near ultraviolet InGaN based light emitting diodes C Haller, JF Carlin, M Mosca, MD Rossell, R Erni, N Grandjean Applied Physics Express 12 (3), 034002, 2019 | 37 | 2019 |
| Multilayer (Al, Ga) N structures for solar-blind detection M Mosca, JL Reverchon, N Grandjean, JY Duboz IEEE Journal of selected topics in quantum electronics 10 (4), 752-758, 2004 | 35 | 2004 |
| Lattice-Matched GaN–InAlN Waveguides at m Grown by Metal–Organic Vapor Phase Epitaxy A Lupu, FH Julien, S Golka, G Pozzovivo, G Strasser, E Baumann, ... IEEE Photonics Technology Letters 20 (2), 102-104, 2008 | 32 | 2008 |
| Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition M Mosca, R Macaluso, C Calì, R Butté, S Nicolay, E Feltin, D Martin, ... Thin Solid Films 539, 55-59, 2013 | 29 | 2013 |
| In situ monitoring of pulsed laser indium-tin-oxide film deposition by optical emission spectroscopy C Cal, R Macaluso, M Mosca Spectrochimica Acta Part B: Atomic Spectroscopy 56 (6), 743-751, 2001 | 29 | 2001 |
| Generation of white LED light by frequency downconversion using perylene-based dye F Caruso, M Mosca, R Macaluso, E Feltin, C Calı̀ Electronics letters 48 (22), 1417-1419, 2012 | 28 | 2012 |
| Deposition of indium tin oxide films by laser ablation: Processing and characterization C Calı̀, M Mosca, G Targia Solid-State Electronics 42 (5), 877-879, 1998 | 27 | 1998 |
| Enhancement of photoconversion efficiency in dye-sensitized solar cells exploiting pulsed laser deposited niobium pentoxide blocking layers A Sacco, MS Di Bella, M Gerosa, A Chiodoni, S Bianco, M Mosca, ... Thin Solid Films 574, 38-42, 2015 | 26 | 2015 |
| Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy F Piva, C De Santi, A Caria, C Haller, JF Carlin, M Mosca, G Meneghesso, ... Journal of Physics D: Applied Physics 54 (2), 025108, 2020 | 23 | 2020 |
| Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate R Macaluso, M Mosca, C Calì, F Di Franco, M Santamaria, F Di Quarto, ... Journal of Applied Physics 113 (16), 2013 | 23 | 2013 |
