| Reconfigurable pn junction diodes and the photovoltaic effect in exfoliated MoS2 films S Sutar, P Agnihotri, E Comfort, T Taniguchi, K Watanabe, J Ung Lee Applied Physics Letters 104 (12), 2014 | 59 | 2014 |
| Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains P Agnihotri, P Dhakras, JU Lee Nano letters 16 (7), 4355-4360, 2016 | 56 | 2016 |
| Edge-state transport in graphene junctions in the quantum Hall regime NN Klimov, ST Le, J Yan, P Agnihotri, E Comfort, JU Lee, DB Newell, ... Physical Review B 92 (24), 241301, 2015 | 53 | 2015 |
| Analysis of the two-dimensional Datta–Das spin field effect transistor P Agnihotri, S Bandyopadhyay Physica E: Low-dimensional Systems and Nanostructures 42 (5), 1736-1740, 2010 | 35 | 2010 |
| Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates P Suvarna, M Tungare, JM Leathersich, P Agnihotri, ... Journal of electronic materials 42, 854-858, 2013 | 26 | 2013 |
| Atomic-scale characterization of graphene p–n junctions for electron-optical applications X Zhou, A Kerelsky, MM Elahi, D Wang, KMM Habib, RN Sajjad, ... ACS nano 13 (2), 2558-2566, 2019 | 18 | 2019 |
| Boson stars with repulsive self-interactions P Agnihotri, J Schaffner-Bielich, IN Mishustin Physical Review D 79 (8), 084033, 2009 | 18 | 2009 |
| Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2 P Dhakras, P Agnihotri, JU Lee Nanotechnology 28 (26), 265203, 2017 | 12 | 2017 |
| TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe2 P Dhakras, P Agnihotri, H Bakhru, HL Hughes, JU Lee IEEE Transactions on Nuclear Science 65 (1), 53-57, 2017 | 9 | 2017 |
| Reverse degradation of nickel graphene junction by hydrogen annealing Z Zhang, F Yang, P Agnihotri, JU Lee, JR Lloyd AIP Advances 6 (2), 2016 | 8 | 2016 |
| A self-assembled room temperature nanowire infrared photodetector based on quantum mechanical wavefunction engineering S Bandyopadhyay, P Agnihotri, S Bandyopadhyay Physica E: Low-dimensional Systems and Nanostructures 44 (7-8), 1478-1485, 2012 | 7 | 2012 |
| Quantitative model of CMOS inverter chain ring oscillator's effective capacitance and its improvements in 14nm FinFET technology SY Mun, J Cho, B Zhu, P Agnihotri, CY Wong, TJ Lee, V Mahajan, BW Liu, ... 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS), 2018 | 5 | 2018 |
| Room temperature nanowire IR, visible and UV photodetectors S Bandyopadhyay, S Bandyopadhyay, P Agnihotri US Patent 8,946,678, 2015 | 4 | 2015 |
| Spin dynamics and spin noise in the presence of randomly varying spin–orbit interaction in a semiconductor quantum wire P Agnihotri, S Bandyopadhyay Journal of Physics: Condensed Matter 24 (21), 215302, 2012 | 4 | 2012 |
| Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy JM Leathersich, M Tungare, X Weng, P Suvarna, P Agnihotri, M Evans, ... Journal of electronic materials 42, 833-837, 2013 | 2 | 2013 |
| Nearly UniversalSpectrum of Mobility Fluctuation Noise in a Quantum Wire at Radio and Microwave Frequencies P Agnihotri, S Bandyopadhyay IEEE transactions on electron devices 57 (11), 3101-3105, 2010 | 1 | 2010 |
| Reconfigurable WSe device: three fundamental devices in one. P Dhakras, P Agnihotri, JU Lee Bulletin of the American Physical Society 62, 2017 | | 2017 |
| Reconfigurable WSe2 device: three fundamental devices in one P Dhakras, P Agnihotri, JU Lee APS March Meeting Abstracts 2017, B32. 002, 2017 | | 2017 |
| Atomic-scaled characterization of graphene PN junctions X Zhou, D Wang, A Dadgar, P Agnihotri, JU Lee, MC Reuter, FM Ross, ... APS March Meeting Abstracts 2016, H16. 012, 2016 | | 2016 |
| Fabrication and characterization of graphene PN junctions D Wang, X Zhou, A Dadgar, P Agnihotri, JU Lee, M Reuter, F Ross, ... APS March Meeting Abstracts 2016, H16. 004, 2016 | | 2016 |
