Thomas Zimmer
Cited by
Cited by
CNTFET modeling and reconfigurable logic-circuit design
I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007
Robust surface-potential-based compact model for GaN HEMT IC design
S Khandelwal, C Yadav, S Agnihotri, YS Chauhan, A Curutchet, T Zimmer, ...
IEEE Transactions on Electron Devices 60 (10), 3216-3222, 2013
Scalable electrical compact modeling for graphene FET transistors
S Fregonese, M Magallo, C Maneux, H Happy, T Zimmer
IEEE Transactions on Nanotechnology 12 (4), 539-546, 2013
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ...
Proceedings of the IEEE 105 (6), 1035-1050, 2017
Computationally efficient physics-based compact CNTFET model for circuit design
S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ...
IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008
Pedagogical evaluation of remote laboratories in eMerge project
D Lang, C Mengelkamp, RS Jaeger, D Geoffroy, M Billaud, T Zimmer
European Journal of Engineering Education 32 (1), 57-72, 2007
Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications
M Najari, S Frégonèse, C Maneux, H Mnif, N Masmoudi, T Zimmer
IEEE transactions on electron devices 58 (1), 195-205, 2010
Pilot study of freshly excised breast tissue response in the 300–600 GHz range
Q Cassar, A Al-Ibadi, L Mavarani, P Hillger, J Grzyb, G MacGrogan, ...
Biomedical optics express 9 (7), 2930-2942, 2018
SiGe HBTs and BiCMOS technology for present and future millimeter-wave systems
T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ...
IEEE Journal of Microwaves 1 (1), 288-298, 2021
A computationally efficient physics-based compact bipolar transistor model for circuit design-Part I: Model formulation
M Schroter, S Lehmann, S Frégonèse, T Zimmer
IEEE transactions on electron devices 53 (2), 279-286, 2006
Electrical compact modelling of graphene transistors
S Fregonese, N Meng, HN Nguyen, C Majek, C Maneux, H Happy, ...
Solid-State Electronics 73, 27-31, 2012
Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ...
IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018
Analysis of CNTFET physical compact model
C Maneux, J Goguet, S Fregonese, T Zimmer, HC d'Honincthun, ...
International Conference on Design and Test of Integrated Systems in …, 2006
On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands
S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer
IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018
A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs
AK Sahoo, S Frégonèse, M Weis, N Malbert, T Zimmer
IEEE Transactions on Electron Devices 59 (10), 2619-2625, 2012
HICUM parameter extraction methodology for a single transistor geometry
D Berger, D Cell, M Schroter, M Malorny, T Zimmer, B Ardouin
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 116-119, 2002
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS
G Avenier, T Schwartzmann, P Chevalier, B Vandelle, L Rubaldo, ...
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005
Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation
T Zimmer, DO Bodi, JM Dumas, N Labat, A Touboul, Y Danto
Solid-state electronics 35 (10), 1543-1548, 1992
Implementation of tunneling phenomena in a CNTFET compact model
S Frégonèse, C Maneux, T Zimmer
IEEE Transactions on Electron Devices 56 (10), 2224-2231, 2009
A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs
S Frégonèse, C Maneux, T Zimmer
IEEE transactions on electron devices 58 (1), 206-215, 2010
The system can't perform the operation now. Try again later.
Articles 1–20