| Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 2019 | 105 | 2019 |
| Back‐end‐of‐line compatible low‐temperature furnace anneal for ferroelectric hafnium zirconium oxide formation D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ... physica status solidi (a) 217 (8), 1900840, 2020 | 98 | 2020 |
| On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide M Lederer, R Olivo, D Lehninger, S Abdulazhanov, T Kämpfe, S Kirbach, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100086, 2021 | 77 | 2021 |
| Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 C Mart, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 112 (5), 2018 | 69 | 2018 |
| Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films C Mart, K Kühnel, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 114 (10), 2019 | 60 | 2019 |
| Doping concentration dependent piezoelectric behavior of Si: HfO2 thin-films S Kirbach, M Lederer, S Eßlinger, C Mart, M Czernohorsky, W Weinreich, ... Applied Physics Letters 118 (1), 2021 | 45 | 2021 |
| High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates K Kühnel, M Czernohorsky, C Mart, W Weinreich Journal of Vacuum Science & Technology B 37 (2), 2019 | 40 | 2019 |
| Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles C Mart, T Kämpfe, R Hoffmann, S Eßlinger, S Kirbach, K Kühnel, ... Advanced Electronic Materials 6 (3), 1901015, 2020 | 39 | 2020 |
| Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates B Hanrahan, C Mart, T Kämpfe, M Czernohorsky, W Weinreich, A Smith Energy Technology 7 (10), 1900515, 2019 | 28 | 2019 |
| Doping ferroelectric hafnium oxide by in-situ precursor mixing C Mart, K Kühnel, T Kämpfe, M Czernohorsky, M Wiatr, S Kolodinski, ... ACS Applied Electronic Materials 1 (12), 2612-2618, 2019 | 26 | 2019 |
| Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films C Mart, T Kämpfe, K Kühnel, M Czernohorsky, S Kolodinski, M Wiatr, ... APL Materials 9 (5), 2021 | 25 | 2021 |
| Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films C Mart, M Czernohorsky, S Zybell, T Kämpfe, W Weinreich Applied Physics Letters 113 (12), 2018 | 23 | 2018 |
| A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 67 (7), 2981-2987, 2020 | 21 | 2020 |
| ToF-SIMS 3D analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor deposition AM Kia, N Haufe, S Esmaeili, C Mart, M Utriainen, RL Puurunen, ... Nanomaterials 9 (7), 1035, 2019 | 21 | 2019 |
| A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 67 (7), 2793-2799, 2020 | 20 | 2020 |
| A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 67 (7), 2793-2799, 2020 | 20 | 2020 |
| Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0. 5Zr0. 5O2 films V Mukundan, S Consiglio, DH Triyoso, K Tapily, S Schujman, C Mart, ... Applied Physics Letters 117 (26), 2020 | 19 | 2020 |
| Energy harvesting in the back-end of line with CMOS compatible ferroelectric hafnium oxide C Mart, S Abdulazhanov, M Czernohorsky, T Kämpfe, D Lehninger, ... 2020 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2020 | 16 | 2020 |
| CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures C Mart, W Weinreich, M Czernohorsky, S Riedel, S Zybell, K Kuhnel 2018 48th European Solid-State Device Research Conference (ESSDERC), 130-133, 2018 | 15 | 2018 |
| Impact of ferroelectric wakeup on reliability of laminate based Si-doped hafnium oxide (HSO) FeFET memory cells T Ali, K Kühnel, M Czernohorsky, M Rudolph, B Pätzold, R Olivo, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-9, 2020 | 14 | 2020 |
Thomas KämpfeFraunhofer IPMS - Center Nanoelectronic TechnologiesVerified email at ipms.fraunhofer.de
