| Robust compact model of high-voltage MOSFET’s drift region G Pahwa, A Sharma, R Goel, G Gill, H Agarwal, YS Chauhan, C Hu IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2022 | 11 | 2022 |
| Compact modeling of impact ionization in high-voltage devices G Gill, A Singhal, G Pahwa, C Hu, H Agarwal IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| Comprehensive high-voltage parameter extraction strategy for BSIM-BULK HV model G Gill, Y Machhiwar, G Pahwa, C Hu, H Agarwal IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| An Improved Robust Infinitely Differentiable Drift Resistance Model for BSIM High Voltage Compact Model A Singhal, G Gill, G Pahwa, C Hu, H Agarwal 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 1 | 2023 |
| Demonstration of On-Chip Test Decompression for EDT using Binary Encoded Neural Autoencoders P Daniel, S Singh, G Gill, A Gangwar, B Ganesh, K Chakrabarti 2019 IEEE International Test Conference India (ITC India), 1-7, 2019 | 1 | 2019 |
| Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics Y Machhiwar, G Gill, KN Kaushal, NR Mohapatra, H Agarwal IEEE Transactions on Electron Devices, 2023 | | 2023 |
chenming huUniversity of California, BerkeleyVerified email at eecs.berkeley.edu
