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Thanh-Toan Pham
Thanh-Toan Pham
onsemi
Email verificata su onsemi.com
Titolo
Citata da
Citata da
Anno
Reliable operation of a nanogenerator under ultraviolet light via engineering piezoelectric potential
TT Pham, KY Lee, JH Lee, KH Kim, KS Shin, MK Gupta, B Kumar, SW Kim
Energy & Environmental Science 6 (3), 841-846, 2013
752013
Deep-depletion mode boron-doped monocrystalline diamond metal oxide semiconductor field effect transistor
TT Pham, J Pernot, G Perez, D Eon, E Gheeraert, N Rouger
IEEE Electron Device Letters 38 (11), 1571-1574, 2017
662017
Deep depletion concept for diamond MOSFET
TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ...
Applied Physics Letters 111 (17), 2017
602017
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
TT Pham, A Maréchal, P Muret, D Eon, E Gheeraert, N Rouger, J Pernot
Journal of Applied Physics 123 (16), 2018
472018
200V, 4MV/cm lateral diamond MOSFET
TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ...
2017 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2017
282017
High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
TT Pham, M Gutiérrez, C Masante, N Rouger, D Eon, E Gheeraert, ...
Applied Physics Letters 112 (10), 2018
272018
Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
J Cañas, JC Piñero, F Lloret, M Gutierrez, T Pham, J Pernot, D Araujo
Applied Surface Science 461, 93-97, 2018
242018
Impact of nonhomoepitaxial defects in depleted diamond MOS capacitors
TT Pham, JC Piñero, A Marechal, M Gutiérrez, F Lloret, D Eon, ...
IEEE Transactions on Electron Devices 65 (5), 1830-1837, 2018
82018
Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
M Gutiérrez, F Lloret, TT Pham, J Cañas, DF Reyes, D Eon, J Pernot, ...
Nanomaterials 8 (8), 584, 2018
72018
Pulsed forward bias body diode stress of 1700 V SiC MOSFETs with individual mapping of basal plane dislocations
S Kochoska, M Domeij, S Sunkari, J Justice, H Das, TT Pham, J Franchi, ...
Materials Science Forum 1062, 554-559, 2022
52022
Body diode of 1.2 kV SiC MOSFET: unipolar and bipolar operation
TT Pham, J Franchi, M Domeij
Materials Science Forum 1091, 37-41, 2023
42023
1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Channel Conduction, Carrier Plasma and Parasitic Turn-On
TT Pham, J Franchi, K Lee, M Domeij
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
32023
Mastering the O-diamond/Al2O3 interface for unipolar boron doped diamond field effect transistor
TT Pham
Université Grenoble Alpes, 2017
32017
Pulsed Forward Bias Body Diode Stress of 1200 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
S Kochoska, M Domeij, TT Pham, S Maslougkas, S Sunkari, J Justice, ...
Materials Science Forum 1091, 43-47, 2023
22023
Diamond MIS transistor
J Pernot, NC Rouger, D Eon, E Gheeraert, G Chicot, TT Pham, F Udrea
22023
Diamond devices for power electronics
N Rouger, TT Pham, G Perez, M Cédric, P Lefranc, PO Jeannin
11th conference on new diamond and nano carbons (Internet). Cairns …, 2017
22017
1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
TT Pham, J Franchi, SH Kang, KS Park, DJ Choi, M Domeij
Solid State Phenomena 360, 45-49, 2024
12024
On the TCAD Modeling of Non-Permanent Gate Current Increase During Short-Circuit Test in SiC MOSFETs
J Roig, S Kochoska, B Vlachakis, J Franchi, TT Pham
Solid State Phenomena 360, 95-101, 2024
2024
Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
S Kochoska, J Franchi, S Maslougkas, M Domeij, TT Pham, S Sunkari, ...
Defect and Diffusion Forum 434, 7-13, 2024
2024
Experimental Investigations on Parasitic Turn-on of 1.2 kV SiC MOSFET Discrete Devices
TT Pham, K Lee, J Franchi, S Kuzmanoska, M Domeij
PCIM Europe 2024; International Exhibition and Conference for Power …, 2024
2024
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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