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Bart Soree
Bart Soree
Principal scientist @ imec and part-time professor University Antwerp & KULeuven
Verified email at imec.be
Title
Cited by
Cited by
Year
Direct and indirect band-to-band tunneling in germanium-based TFETs
KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ...
IEEE Transactions on Electron Devices 59 (2), 292-301, 2011
4592011
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 2010
2752010
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets
KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ...
IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012
1462012
Figure of merit for and identification of sub-60 mV/decade devices
WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102 (1), 2013
1272013
Impact of field-induced quantum confinement in tunneling field-effect devices
WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti
Applied Physics Letters 98 (14), 2011
1212011
Analytical model for a tunnel field-effect transistor
WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
1132008
Analytical model for point and line tunneling in a tunnel field-effect transistor
W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
2008 international conference on simulation of semiconductor processes and …, 2008
1122008
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode
B Sorée, W Magnus, G Pourtois
Journal of computational electronics 7, 380-383, 2008
1102008
Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing
A Nourbakhsh, M Cantoro, A Klekachev, F Clemente, B Soree, ...
The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010
1012010
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
812011
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach
W Vandenberghe, B Sorée, W Magnus, MV Fischetti
Journal of Applied Physics 109 (12), 2011
652011
Design and benchmarking of hybrid CMOS-spin wave device circuits compared to 10nm CMOS
O Zografos, B Sorée, A Vaysset, S Cosemans, L Amaru, PE Gaillardon, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 686-689, 2015
612015
Nanoscale domain wall devices with magnetic tunnel junction read and write
E Raymenants, O Bultynck, D Wan, T Devolder, K Garello, L Souriau, ...
Nature Electronics 4 (6), 392-398, 2021
592021
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 2014
572014
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Y Zhang, MV Fischetti, B Sorée, W Magnus, M Heyns, M Meuris
Journal of applied physics 106 (8), 2009
512009
Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers
S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
npj 2D Materials and Applications 5 (1), 54, 2021
502021
A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors
WG Vandenberghe, AS Verhulst, KH Kao, KD Meyer, B Sorée, W Magnus, ...
Applied Physics Letters 100 (19), 2012
472012
Temperature-dependent modeling and characterization of through-silicon via capacitance
G Katti, M Stucchi, D Velenis, B Soree, K De Meyer, W Dehaene
IEEE Electron Device Letters 32 (4), 563-565, 2011
472011
Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics
TP O’Regan, MV Fischetti, B Sorée, S Jin, W Magnus, M Meuris
Journal of Applied Physics 108 (10), 2010
402010
First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts
G Pourtois, A Lauwers, J Kittl, L Pantisano, B Sorée, S De Gendt, ...
Microelectronic Engineering 80, 272-279, 2005
392005
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Articles 1–20