Colin Humphreys

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Rachel OliverProfessor of Materials Science, Cambridge UniversityAdresse e-mail validée de cam.ac.uk
Philip DawsonUniversity of ManchesterAdresse e-mail validée de manchester.ac.uk
Gianluigi BottonMcMaster UniversityAdresse e-mail validée de mcmaster.ca
Michelle MoramSenior Lecturer and Royal Society University Research Fellow, Imperial College LondonAdresse e-mail validée de imperial.ac.uk
Dandan ZhuUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
F. C-P. MassabuauUniversity of StrathclydeAdresse e-mail validée de strath.ac.uk
Chris BoothroydNanyang Technological UniversityAdresse e-mail validée de ntu.edu.sg
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Adresse e-mail validée de c2n.upsaclay.fr
David HolecMontanuniversität Leoben, AustriaAdresse e-mail validée de unileoben.ac.at
Robert TaylorProfessor of Condensed Matter Physics, University of OxfordAdresse e-mail validée de physics.ox.ac.uk
Dr. Darren M. GrahamThe University of ManchesterAdresse e-mail validée de manchester.ac.uk
T.M. SmeetonVice President, Research at EnvisicsAdresse e-mail validée de envisics.com
Tongtong ZhuUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
Wai Yuen FuResearch Assistant Professor, Electrical and Electronic Engineering, the University of Hong KongAdresse e-mail validée de hku.hk
Ranjan DattaProfessorAdresse e-mail validée de jncasr.ac.in
James Thomas GriffithsResearch associate, University of CambridgeAdresse e-mail validée de cam.ac.uk
Matthew J. DaviesAttolight AGAdresse e-mail validée de attolight.com
G A D BriggsProfessor of Nanomaterials, University of OxfordAdresse e-mail validée de materials.ox.ac.uk
Siyuan ZhangMax-Planck-Institut für Eisenforschung GmbHAdresse e-mail validée de mpie.de
Simon HammersleyResearch Associate, University of ManchesterAdresse e-mail validée de manchester.ac.uk

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Colin Humphreys

Queen Mary University of London

Adresse e-mail validée de qmul.ac.uk

Materials science graphene Gallium Nitride electron microscopy science and religion


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton Physical Review B 57 (3), 1505, 1998	11263	1998
Solid-state lighting CJ Humphreys MRS bulletin 33 (4), 459-470, 2008	458	2008
Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013	345	2013
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied Physics Letters 83 (26), 5419-5421, 2003	332	2003
The scattering of fast electrons by crystals CJ Humphreys Reports on Progress in Physics 42 (11), 1825, 1979	314	1979
Machine learning predicts laboratory earthquakes B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ... Geophysical Research Letters 44 (18), 9276-9282, 2017	311	2017
Absorption parameters in electron diffraction theory PBH CJ Humphreys Philosophical Magazine 18, 115-122, 1968	278	1968
Optical and microstructural studies of single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 103508, 2005	267	2005
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ... Journal of Applied Physics 91 (1), 367-374, 2002	246	2002
Critical thickness calculations for InGaN/GaN D Holec, P Costa, MJ Kappers, CJ Humphreys Journal of Crystal Growth 303 (1), 314-317, 2007	242	2007
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies Journal of Applied Physics 89 (6), 3143-3150, 2001	206	2001
Carrier localization mechanisms in In x Ga 1− x N/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B 83 (11), 115321, 2011	205	2011
Three-dimensional atom probe studies of an multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 061903, 2007	205	2007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	193	1989
Chemical mapping and formation of V-defects in InGaN multiple quantum wells N Sharma, P Thomas, D Tricker, C Humphreys Applied Physics Letters 77 (9), 1274-1276, 2000	173	2000
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003	171	2003
Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys Journal of Applied Physics 105 (11), 113501, 2009	167	2009
Dopant profiling with the scanning electron microscope—A study of Si SL Elliott, RF Broom, CJ Humphreys Journal of applied physics 91 (11), 9116-9122, 2002	165	2002
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons CJHPBH JP Spencer Philosophical Magazine 26, 193-213, 1972	161	1972
Threading dislocation reduction in (0 0 01) GaN thin films using SiNx interlayers MJ Kappers, R Datta, RA Oliver, FDG Rayment, ME Vickers, ... Journal of Crystal Growth 300 (1), 70-74, 2007	151	2007

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