Quantum well lasers P Zory Academic Press, 1993 | 815* | 1993 |
A model for GRIN-SCH-SQW diode lasers SR Chinn, PS Zory, AR Reisinger IEEE Journal of quantum Electronics 24 (11), 2191-2214, 1988 | 279 | 1988 |
Nuclear Electric Field Gradient Determination Utilizing the Mossbauer Effect (Fe57) P Zory physical review 140, A1401-A1407, 1965 | 152 | 1965 |
Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers PS Zory, AR Reisinger, RG Waters, LJ Mawst, CA Zmudzinski, ... Applied physics letters 49 (1), 16-18, 1986 | 92 | 1986 |
Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers PS Zory, AR Reisinger, LJ Mawst, G Costrini, CA Zmudzinski, ... Electronics letters 22 (9), 475-476, 1986 | 85 | 1986 |
Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers A Reisinger, P Zory, R Waters IEEE Journal of Quantum Electronics 23 (6), 993-999, 1987 | 83 | 1987 |
Laser oscillation in leaky corrugated optical waveguides P Zory Applied Physics Letters 22 (4), 125-128, 1973 | 81 | 1973 |
Grating-coupled double-heterostructure AlGaAs diode lasers P Zory, L Comerford IEEE Journal of Quantum Electronics 11 (7), 451-457, 1975 | 77 | 1975 |
Coherent, monolithic two‐dimensional (10× 10) laser arrays using grating surface emission GA Evans, NW Carlson, JM Hammer, M Lurie, JK Butler, SL Palfrey, ... Applied physics letters 53 (22), 2123-2125, 1988 | 75 | 1988 |
Dark-line-resistant, aluminum-free diode laser at 0.8 mu m SL Yellen, AH Shepard, CM Harding, JA Baumann, RG Waters, ... IEEE Photonics Technology Letters 4 (12), 1328-1330, 1992 | 69 | 1992 |
Intersubband quantum-box semiconductor lasers CF Hsu, O Jeong-Seok, P Zory, D Botez IEEE Journal of selected topics in Quantum Electronics 6 (3), 491-503, 2000 | 65 | 2000 |
Pulsed anodic oxides for III‐V semiconductor device fabrication MJ Grove, DA Hudson, PS Zory, RJ Dalby, CM Harding, A Rosenberg Journal of applied physics 76 (1), 587-589, 1994 | 64 | 1994 |
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation LJ Mawst, A Bhattacharya, M Nesnidal, J Lopez, D Botez, JA Morris, ... Applied physics letters 67 (20), 2901-2903, 1995 | 60 | 1995 |
Coulomb enhancement in InGaAs-GaAs quantum-well lasers CF Hsu, PS Zory, CH Wu, MA Emanuel IEEE Journal of Selected Topics in Quantum Electronics 3 (2), 158-165, 1997 | 56 | 1997 |
Selectively etched diffraction gratings in GaAs L Comerford, P Zory Applied Physics Letters 25 (4), 208-210, 1974 | 56 | 1974 |
High‐power seven‐element grating surface emitting diode laser array with 0.012° far‐field angle NW Carlson, GA Evans, JM Hammer, M Lurie, LA Carr, FZ Hawrylo, ... Applied physics letters 52 (12), 939-941, 1988 | 51 | 1988 |
Room temperature photopumped ZnSe lasers CA Zmudzinski, Y Guan, PS Zory IEEE Photonics Technology Letters 2 (2), 94-96, 1990 | 45 | 1990 |
Mounting arrangement for semiconductor optoelectronic devices PS Zory, FW Scholl, HF Lockwood US Patent 4,347,655, 1982 | 41 | 1982 |
Constricted double‐heterostructure (AlGa) As diode lasers D Botez, P Zory Applied Physics Letters 32 (4), 261-263, 1978 | 41 | 1978 |
Intersubband quantum box semiconductor laser D Botez, PS Zory, CF Hsu US Patent 5,953,356, 1999 | 40 | 1999 |