Heike Riel
Heike Riel
IBM Research
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Tunnel field-effect transistors as energy-efficient electronic switches
AM Ionescu, H Riel
nature 479 (7373), 329-337, 2011
Realization of a silicon nanowire vertical surround‐gate field‐effect transistor
V Schmidt, H Riel, S Senz, S Karg, W Riess, U Gösele
small 2 (1), 85-88, 2006
Toward nanowire electronics
J Appenzeller, J Knoch, MT Bjork, H Riel, H Schmid, W Riess
IEEE Transactions on electron devices 55 (11), 2827-2845, 2008
Donor deactivation in silicon nanostructures
MT Björk, H Schmid, J Knoch, H Riel, W Riess
Nature nanotechnology 4 (2), 103-107, 2009
Reversible and controllable switching of a single-molecule junction
E Lörtscher, JW Ciszek, J Tour, H Riel
Small, 2006
Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes
B Ruhstaller, SA Carter, S Barth, H Riel, W Riess, JC Scott
Journal of Applied Physics 89 (8), 4575-4586, 2001
Statistical approach to investigating transport through single molecules
E Lörtscher, HB Weber, H Riel
Physical review letters 98 (17), 176807, 2007
III–V compound semiconductor transistors—from planar to nanowire structures
H Riel, LE Wernersson, M Hong, JA Del Alamo
Mrs Bulletin 39 (8), 668-677, 2014
Electron mobility in tris (8-hydroxy-quinoline) aluminum thin films determined via transient electroluminescence from single-and multilayer organic light-emitting diodes
S Barth, P Müller, H Riel, PF Seidler, W Riess, H Vestweber, H Bässler
Journal of Applied physics 89 (7), 3711-3719, 2001
Phosphorescent top-emitting organic light-emitting devices with improved light outcoupling
H Riel, S Karg, T Beierlein, B Ruhstaller, W Rieß
Applied Physics Letters 82 (3), 466-468, 2003
Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study
H Riel, S Karg, T Beierlein, W Rieß, K Neyts
Journal of Applied Physics 94 (8), 5290-5296, 2003
Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ...
Applied Physics Letters 106 (23), 2015
Silicon nanowire tunneling field-effect transistors
MT Björk, J Knoch, H Schmid, H Riel, W Riess
Applied Physics Letters 92 (19), 2008
Temperature mapping of operating nanoscale devices by scanning probe thermometry
F Menges, P Mensch, H Schmid, H Riel, A Stemmer, B Gotsmann
Nature communications 7 (1), 10874, 2016
Influence of trapped and interfacial charges in organic multilayer light-emitting devices
W Brütting, H Riel, T Beierlein, W Riess
Journal of Applied Physics 89 (3), 1704-1712, 2001
Preparation of metallic films on elastomeric stamps and their application for contact processing and contact printing
H Schmid, H Wolf, R Allenspach, H Riel, S Karg, B Michel, E Delamarche
Advanced Functional Materials 13 (2), 145-153, 2003
Simulating electronic and optical processes in multilayer organic light-emitting devices
B Ruhstaller, T Beierlein, H Riel, S Karg, JC Scott, W Riess
IEEE Journal of Selected Topics in Quantum Electronics 9 (3), 723-731, 2003
Vertical III–V nanowire device integration on Si (100)
M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ...
Nano letters 14 (4), 1914-1920, 2014
Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain
G Signorello, S Karg, MT Björk, B Gotsmann, H Riel
Nano letters 13 (3), 917-924, 2013
Length-dependent thermal transport along molecular chains
T Meier, F Menges, P Nirmalraj, H Hölscher, H Riel, B Gotsmann
Physical review letters 113 (6), 060801, 2014
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