| Ferroelectricity in hafnium oxide thin films TS Böscke, J Müller, D Bräuhaus, U Schröder, U Böttger Applied Physics Letters 99 (10), 102903-102903-3, 2011 | 2296 | 2011 |
| Ferroelectricity in simple binary ZrO2 and HfO2 J Müller, TS Böscke, U Schröder, S Mueller, D Bräuhaus, U Böttger, ... Nano Letters, 2012 | 1533 | 2012 |
| Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015 | 987 | 2015 |
| Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012 | 771 | 2012 |
| Ferroelectricity in yttrium-doped hafnium oxide J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ... Journal of Applied Physics 110 (11), 114113-114113-5, 2011 | 635 | 2011 |
| Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ... Applied Physics Letters 99 (11), 112901-112901-3, 2011 | 558 | 2011 |
| Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30, 2015 | 504 | 2015 |
| Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30, 2015 | 480 | 2015 |
| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 455 | 2017 |
| Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013 | 446 | 2013 |
| Ferroelectricity in undoped hafnium oxide P Polakowski, J Müller Applied Physics Letters 106 (23), 2015 | 397 | 2015 |
| Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014 | 378 | 2014 |
| Wake-up effects in Si-doped hafnium oxide ferroelectric thin films D Zhou, J Xu, Q Li, Y Guan, F Cao, X Dong, J Müller, T Schenk, ... Applied Physics Letters 103 (19), 2013 | 359 | 2013 |
| Phase transitions in ferroelectric silicon doped hafnium oxide TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ... Applied Physics Letters 99 (11), 112904-112904-3, 2011 | 359 | 2011 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 357 | 2016 |
| Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors TS Böscke, J Müller, D Bräuhaus, U Schröder, U Böttger Electron Devices Meeting (IEDM), 2011 IEEE International, 24.5. 1-24.5. 4, 2011 | 350 | 2011 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Mueller, D Martin, ... VLSI Technology (VLSIT), 2012 Symposium on, 25-26, 2012 | 295 | 2012 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 291 | 2017 |
| Ferroelectric ternary content-addressable memory for one-shot learning K Ni, X Yin, AF Laguna, S Joshi, S Dünkel, M Trentzsch, J Müller, S Beyer, ... Nature Electronics 2 (11), 521-529, 2019 | 282 | 2019 |
| Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories E Yurchuk, J Müller, S Müller, J Paul, M Pešić, R van Bentum, ... IEEE Transactions on Electron Devices 63 (9), 3501-3507, 2016 | 277 | 2016 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenVerified email at namlab.com
