Justin Weber
Justin Weber
Computational Materials Science, Intel Corporation
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Oxygen vacancies and donor impurities in
JB Varley, JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 97 (14), 142106, 2010
5802010
Quantum computing with defects
JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ...
Proceedings of the National Academy of Sciences 107 (19), 8513-8518, 2010
5642010
Experimental electronic structure of In2O3 and Ga2O3
C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ...
New Journal of Physics 13 (8), 085014, 2011
2392011
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre
Applied physics letters 96 (15), 152908, 2010
1662010
Dangling-bond defects and hydrogen passivation in germanium
JR Weber, A Janotti, P Rinke, CG Van de Walle
Applied Physics Letters 91 (14), 142101, 2007
1592007
Native defects in and their impact on metal-oxide-semiconductor-based devices
JR Weber, A Janotti, CG Van de Walle
Journal of Applied Physics 109 (3), 033715, 2011
1552011
The electronic structure of
M Mohamed, C Janowitz, I Unger, R Manzke, Z Galazka, R Uecker, ...
Applied Physics Letters 97 (21), 211903, 2010
1382010
Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures
MS Miao, JR Weber, CG Van de Walle
Journal of Applied Physics 107 (12), 123713, 2010
942010
Defects in SiC for quantum computing
JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ...
Journal of Applied Physics 109 (10), 102417, 2011
652011
Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces
JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 97 (19), 192106, 2010
482010
Dangling bonds and vacancies in germanium
JR Weber, A Janotti, CG Van de Walle
Physical Review B 87 (3), 035203, 2013
472013
Quantum computing with defects
L Gordon, JR Weber, JB Varley, A Janotti, DD Awschalom, ...
MRS Bulletin 38 (10), 802 - 807, 2013
452013
Point defects in Al2O3 and their impact on gate stacks
JR Weber, A Janotti, CG Van de Walle
Microelectronic engineering 86 (7-9), 1756-1759, 2009
412009
Defects at Ge/oxide and III–V/oxide interfaces
CG Van de Walle, M Choi, JR Weber, JL Lyons, A Janotti
Microelectronic engineering 109, 211-215, 2013
262013
Role of hydrogen at germanium/dielectric interfaces
CG Van de Walle, JR Weber, A Janotti
Thin solid films 517 (1), 144-147, 2008
132008
Defects in germanium
JR Weber, A Janotti, CG Van de Walle
Photonics and Electronics with Germanium, 1-23, 2015
102015
Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces
MS Miao, PG Moses, JR Weber, A Janotti, CG Van de Walle
EPL (Europhysics Letters) 89 (5), 56004, 2010
92010
Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]
JB Varley, JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 108 (3), 039901, 2016
82016
Oxygen vacancies and donor impurities in beta-Ga2O3 (vol 97, 142106, 2010)
JB Varley, JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 108 (3), 2016
22016
State-of-the-art TCAD: 25 years ago and today
M Stettler, S Cea, S Hasan, L Jiang, A Kaushik, P Keys, R Kotlyar, ...
2019 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2019
12019
The system can't perform the operation now. Try again later.
Articles 1–20