M. Hong
M. Hong
Natl Taiwan Univ. Bell Laboratories
Adresse e-mail validée de phys.ntu.edu.tw
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Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
M Hong, J Kwo, AR Kortan, JP Mannaerts, AM Sergent
Science 283 (5409), 1897-1900, 1999
Ga2O3 films for electronic and optoelectronic applications
M Passlack, EF Schubert, WS Hobson, M Hong, N Moriya, SNG Chu, ...
Journal of applied physics 77 (2), 686-693, 1995
Observation of a magnetic antiphase domain structure with long-range order in a synthetic Gd-Y superlattice
CF Majkrzak, JW Cable, J Kwo, M Hong, DB McWhan, Y Yafet, ...
Physical review letters 56 (25), 2700, 1986
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ...
Applied Physics Letters 87 (25), 252104, 2005
Properties of high κ gate dielectrics and for Si
J Kwo, M Hong, AR Kortan, KL Queeney, YJ Chabal, RL Opila Jr, ...
Journal of Applied Physics 89 (7), 3920-3927, 2001
Crystal structure of the 80 K superconductor YBa 2 Cu 4 O 8
P Marsh, RM Fleming, ML Mandich, AM DeSantolo, J Kwo, M Hong, ...
Nature 334 (6178), 141-143, 1988
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ...
Applied Physics Letters 83 (1), 180-182, 2003
High ε gate dielectrics and for silicon
J Kwo, M Hong, AR Kortan, KT Queeney, YJ Chabal, JP Mannaerts, ...
Applied Physics Letters 77 (1), 130-132, 2000
Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox
JW Ekin, AI Braginski, AJ Panson, MA Janocko, DW Capone, NJ Zaluzec, ...
Journal of applied physics 62 (12), 4821-4828, 1987
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
PD Ye, GD Wilk, J Kwo, B Yang, HJL Gossmann, M Frei, SNG Chu, ...
IEEE Electron Device Letters 24 (4), 209-211, 2003
Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
M Passlack, M Hong, JP Mannaerts
Applied physics letters 68 (8), 1099-1101, 1996
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
Structural and superconducting properties of orientation-ordered Y 1 Ba 2 Cu 3 O 7− x films prepared by molecular-beam epitaxy
J Kwo, TC Hsieh, RM Fleming, M Hong, SH Liou, BA Davidson, ...
Physical Review B 36 (7), 4039, 1987
Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices
J Kwo, EM Gyorgy, DB McWhan, M Hong, FJ DiSalvo, C Vettier, JE Bower
Physical review letters 55 (13), 1402, 1985
Superconducting Y‐Ba‐Cu‐O oxide films by sputtering
M Hong, SH Liou, J Kwo, BA Davidson
Applied physics letters 51 (9), 694-696, 1987
Magnetic rare earth superlattices
CF Majkrzak, J Kwo, M Hong, Y Yafet, D Gibbs, CL Chien, J Bohr
Advances in Physics 40 (2), 99-189, 1991
Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
M Passlack, M Hong, JP Mannaerts, RL Opila, SNG Chu, N Moriya, F Ren, ...
IEEE Transactions on Electron Devices 44 (2), 214-225, 1997
Optical properties of gallium oxide thin films
M Rebien, W Henrion, M Hong, JP Mannaerts, M Fleischer
Applied physics letters 81 (2), 250-252, 2002
Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy
M Hong, M Passlack, JP Mannaerts, J Kwo, SNG Chu, N Moriya, SY Hou, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Energy-band parameters of atomic-layer-deposition heterostructure
ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong
Applied physics letters 89 (1), 012903, 2006
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