Don Monroe
Don Monroe
Freelance science writer
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Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
6831992
Hopping in exponential band tails
D Monroe
Physical Review Letters 54 (2), 146, 1985
6801985
Decay of ultraviolet‐induced fiber Bragg gratings
T Erdogan, V Mizrahi, PJ Lemaire, D Monroe
Journal of applied physics 76 (1), 73-80, 1994
5881994
Looking for chinks in the armor of bacterial biofilms
D Monroe
PLoS biology 5 (11), e307, 2007
4492007
Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs
SH Oh, D Monroe, JM Hergenrother
IEEE electron device letters 21 (9), 445-447, 2000
4152000
Dialogue on reverse‐engineering assessment and methods: the DREAM of high‐throughput pathway inference
G Stolovitzky, DON Monroe, A Califano
Annals of the New York Academy of Sciences 1115 (1), 1-22, 2007
3932007
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied physics letters 59 (13), 1611-1613, 1991
3471991
The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length
JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
250*1999
Ultra-thin gate dielectrics: They break down, but do they fail?
BE Weir, PJ Silverman, D Monroe, KS Krisch, MA Alam, GB Alers, ...
International Electron Devices Meeting. IEDM Technical Digest, 73-76, 1997
2471997
Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson
Applied physics letters 63 (16), 2263-2264, 1993
2461993
Semiconductor heterostructure devices with strained semiconductor layers
D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie
US Patent 5,442,205, 1995
2271995
CMOS integrated circuit having vertical transistors and a process for fabricating same
JM Hergenrother, DP Monroe
US Patent 6,653,181, 2003
130*2003
Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures
D Monroe, YH Xie, EA Fitzgerald, PJ Silverman, GP Watson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
1281993
New universality at the magnetic field driven insulator to integer quantum Hall effect transitions
SH Song, D Shahar, DC Tsui, YH Xie, D Monroe
Physical review letters 78 (11), 2200, 1997
1111997
Exactly exponential band tail in a glassy semiconductor
D Monroe, MA Kastner
Physical Review B 33 (12), 8881, 1986
1091986
Process for fabricating vertical transistors
JM Hergenrother, DP Monroe, GR Weber
US Patent 6,197,641, 2001
1082001
Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si
YH Xie, EA Fitzgerald, D Monroe, PJ Silverman, GP Watson
Journal of applied physics 73 (12), 8364-8370, 1993
1071993
Experimental evidence for a two-dimensional quantized Hall insulator
M Hilke, D Shahar, SH Song, DC Tsui, YH Xie, D Monroe
Nature 395 (6703), 675-677, 1998
1001998
Process for fabricating vertical transistors
JM Hergenrother, DP Monroe
US Patent 6,027,975, 2000
942000
Long-lived Coulomb gap in a compensated semiconductor—the electron glass
D Monroe, AC Gossard, JH English, B Golding, WH Haemmerle, ...
Physical review letters 59 (10), 1148, 1987
851987
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