| A simple figure of merit of RF MOSFET for low-noise amplifier design I Song, J Jeon, HS Jhon, J Kim, BG Park, JD Lee, H Shin IEEE Electron Device Letters 29 (12), 1380-1382, 2008 | 63 | 2008 |
| Prediction of process variation effect for ultrascaled GAA vertical FET devices using a machine learning approach K Ko, JK Lee, M Kang, J Jeon, H Shin IEEE Transactions on Electron Devices 66 (10), 4474-4477, 2019 | 48 | 2019 |
| An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effects J Jeon, JD Lee, BG Park, H Shin Solid-State Electronics 51 (7), 1034-1038, 2007 | 44 | 2007 |
| 8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application HS Jhon, I Song, J Jeon, H Jung, M Koo, BG Park, JD Lee, H Shin Electronics Letters 44 (23), 1353-1354, 2008 | 35 | 2008 |
| The first observation of shot noise characteristics in 10-nm scale MOSFETs J Jeon, J Lee, J Kim, CH Park, H Lee, H Oh, HK Kang, BG Park, H Shin 2009 Symposium on VLSI Technology, 48-49, 2009 | 34 | 2009 |
| Temporal noise analysis and reduction method in CMOS image sensor readout circuit BC Kim, J Jeon, H Shin IEEE transactions on electron devices 56 (11), 2489-2495, 2009 | 31 | 2009 |
| Device and circuit exploration of multi-nanosheet transistor for sub-3 nm technology node Y Seon, J Chang, C Yoo, J Jeon Electronics 10 (2), 180, 2021 | 30 | 2021 |
| A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond D Bae, G Bae, KK Bhuwalka, SH Lee, MG Song, T Jeon, C Kim, W Kim, ... 2016 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2016 | 30 | 2016 |
| Analysis of self-heating effects in multi-nanosheet FET considering bottom isolation and package options C Yoo, J Chang, Y Seon, H Kim, J Jeon IEEE Transactions on Electron Devices 69 (3), 1524-1531, 2022 | 27 | 2022 |
| Compact model strategy of metal-gate work-function variation for ultrascaled FinFET and vertical GAA FETs K Ko, M Kang, J Jeon, H Shin IEEE Transactions on Electron Devices 66 (3), 1613-1616, 2019 | 26 | 2019 |
| Analysis on self-heating effects in three-stacked nanoplate FET H Kim, D Son, I Myeong, M Kang, J Jeon, H Shin IEEE Transactions on Electron Devices 65 (10), 4520-4526, 2018 | 26 | 2018 |
| Investigation of gate sidewall spacer optimization from OFF-state leakage current perspective in 3-nm node device D Ryu, I Myeong, JK Lee, M Kang, J Jeon, H Shin IEEE Transactions on Electron Devices 66 (6), 2532-2537, 2019 | 20 | 2019 |
| Analytical thermal noise model of deep-submicron MOSFETs HC Shin, SY Kim, JW Jeon JSTS: Journal of Semiconductor Technology and Science 6 (3), 206-209, 2006 | 20 | 2006 |
| Analysis of electrothermal characteristics of GAA vertical nanoplate-shaped FETs D Son, I Myeong, H Kim, M Kang, J Jeon, H Shin IEEE Transactions on Electron Devices 65 (7), 3061-3064, 2018 | 19 | 2018 |
| Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays N Xu, J Wang, Y Deng, Y Lu, B Fu, W Choi, U Monga, J Jeon, J Kim, ... 2016 IEEE International Electron Devices Meeting (IEDM), 7.7. 1-7.7. 4, 2016 | 18 | 2016 |
| Thermal-Aware Shallow Trench Isolation Design Optimization for Minimizing in Various Sub-10-nm 3-D Transistors I Myeong, D Son, H Kim, M Kang, J Jeon, H Shin IEEE Transactions on Electron Devices 66 (1), 647-654, 2018 | 17 | 2018 |
| Analytical noise parameter model of short-channel RF MOSFETs J Jeon, BG Park, JD Lee, H Shin Journal of Semiconductor Technology and Science 7 (2), 88-93, 2007 | 17 | 2007 |
| Quinacridone-quinoxaline-based copolymer for organic field-effect transistors and its high-voltage logic circuit operations J Jeon, H Jhon, M Kang, HJ Song, TK An Organic Electronics 56, 1-4, 2018 | 16 | 2018 |
| Models of threshold voltage and subthreshold slope for macaroni channel MOSFET Q Nguyen-Gia, M Kang, J Jeon, H Shin IEEE Electron Device Letters 41 (7), 973-976, 2020 | 14 | 2020 |
| Investigation of electrothermal behaviors of 5-nm bulk FinFET J Jeon, HS Jhon, M Kang IEEE Transactions on Electron Devices 64 (12), 5284-5287, 2017 | 14 | 2017 |
